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| 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 marking marking d3e features small surface mounting type low vf. (v f =0.43v typ. at 0.5a) high reliability. silicon epitaxial planar absolute maximum ratings ta = 25 parameter symbol rating unit reverse voltage v rm 40 v dc reverse voltage v r 20 v mean rectifying current i o 0.5 a forward current surge peak i fsm 3a junction temperature t j 125 storage temperature t stg -40to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit v f 1i f =500ma 0.50 v v f 2i f =10ma 0.30 v reverse current i r 1v r =10v 30 a capacitance between terminal c t v r =10v , f=1mhz 20 pf forwarad voltage KB411D (rb411d) sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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