? semiconductor components industries, llc, 2013 april, 2013 ? rev. 1 1 publication order number: nhpv08s600/d NHPV08S600G, nhpj08s600g switchmode power rectifiers features ? ultrafast 30 nanosecond recovery time ? 150 c operating junction temperature ? high voltage capability of 600 v ? low forward drop ? low leakage specified @ 125 c case temperature ? these devices are pb ? free, halogen free/bfr free and are rohs compliant mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. planar ultrafast rectifiers 8 a, 600 v 1 3 4 http://onsemi.com see detailed ordering and shipping information in the package dimensions sect ion on page 2 of this data sheet. ordering information a = assembly location y = year ww = work week g=pb ? free package ka = diode polarity to ? 220ac case 221b 3 4 1 marking diagrams ay ww hpv8s600g ka to ? 220 fullpak case 221ag 3 1 ayww hpj8s600g ka 31
NHPV08S600G, nhpj08s600g http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v average rectified forward current (rated v r )to ? 220ac to ? 220fp i f(av) 8 a @ t c = 130 c 8 a @ t c = 95 c a peak rectified forward current (rated v r , square wave, 20 khz) to ? 220ac to ? 220fp i frm 8 a @ t c = 125 c 8 a @ t c = 85 c a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 80 a operating junction temperature and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics characteristic symbol value unit NHPV08S600G: thermal resistance junction ? to ? case (note 1) r jc 1.5 c/w nhpj08s600g: thermal resistance junction ? to ? case (note 1) r jc 4.25 c/w 1. junction ? to ? case shown as a typical value using a fixed 25 c cold plate boundary. electrical characteristics characteristic test conditions symbol typ max unit instantaneous forward voltage (note 2) (i f = 8 a, t c = 125 c) (i f = 8 a, t c = 25 c) v f 1.5 2.7 1.8 3.2 v instantaneous reverse current (note 2) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 46 0.1 400 30 a reverse recovery time (i f = 0.5 a, i rr = 0.25 a, i r = 1 a) (i f = 1 a, di f /dt = ? 50 a/ s, v r = 30 v) t rr ? ? 30 50 ns reverse recovery time peak reverse recovery current total reverse recovery charge softness factor (i f = 8 a, d if /d t = ? 200 a/ s, t c = 25 c) t rr i rm q rr s 30 2.3 37 2 50 3 50 ? ns a nc ? reverse recovery time peak reverse recovery current total reverse recovery charge softness factor (i f = 8 a, d if /d t = ? 200 a/ s, t c = 125 c) t rr i rm q rr s 45 5.5 150 0.35 ? ? ? ? ns a nc ? forward recovery time forward voltage time (i f = 8 a, d if /d t = 120 a/ s, t c = 25 c) t fr v fp ? ? 200 6 ns v 2. pulse test: pulse width = 300 s, duty cycle 2.0%. ordering information device package shipping ? NHPV08S600G to ? 220ac (pb ? free / halide ? free) 50 units / rail nhpj08s600g to ? 220fp (pb ? free / halide ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NHPV08S600G, nhpj08s600g http://onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. typical reverse characteristics v f , instantaneous forward voltage (v) v r , instantaneous reverse voltage (v) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 100 600 500 400 300 200 100 0 0.001 0.01 0.1 1 10 100 1000 figure 3. typical junction capacitance figure 4. current derating to ? 220ac v r , reverse voltage (v) t c , case temperature ( c) 1000 100 10 1 0.1 10 100 140 120 100 80 60 0 5 10 15 figure 5. forward power dissipation i f(av) , average forward current (a) 10 8 6 4 2 0 0 5 10 15 20 25 30 i f , instantaneous forward current (a) i r , instantaneous reverse current ( a) c, junction capacitance (pf) i f(av) , average forward current (a) p f(av) , average forward power dissipation (w) 4.0 t j = 25 c t j = 150 c i pk /i av = 20 i pk /i av = 10 i pk /i av = 5 square wave dc dc square wave r jc = 1.5 c/w t a = 25 c t a = 125 c t a = 150 c t a = 25 c t a = 125 c t a = 150 c
NHPV08S600G, nhpj08s600g http://onsemi.com 4 package dimensions to ? 220 two ? lead case 221b ? 04 issue e b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.161 3.61 4.09 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f to ? 220 fullpak, 2 ? lead case 221ag issue o dim min max millimeters d 14.22 15.88 e 9.65 10.67 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 5.97 6.48 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 e1 5.08 bsc e1 on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nhpv08s600/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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