2a, 600v n-channel power mosfet ? description the ams 2n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 5 ? @v gs = 10v * ultra low gate charge (typical 9.0nc) * low reverse transfer capacitance (c rss = typical 5.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol to-126 1 1 to-220f to-220 1 1 to-220f1 to-262 1 1 to-252 to-251 1 to-251l 1
? absolute maximum ratings ( t c = 25 ? ? thermal data parameter package symbol ratings unit junction to ambient to-220/ to-262
? electrical characteristics (t j =25 k , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakdown voltage temperature on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d =1a 3.6 5
dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f =1mhz 270 350 pf output capacitance c oss 40 50 pf reverse transfer capacitance c rss 5 7 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =2.4a, r g =25
drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0 v, i sd = 2.0 a 1.4 v continuous drain-source current i sd 2.0 a pulsed drain-source current i sm 8.0 a reverse recovery time t r r v gs = 0 v, i sd = 2.4a, di/dt = 100 a/ s (note
? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
ams assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all ams products described or contained herein. ams products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
