fms 4 features high breakdow n voltage p ow er diss ipation: p c =300mw collector curren : i c =-50ma absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo -120 v collector-em itt er voltage v ceo -120 v em itt er-base voltage v ebo -5.0 v collector curr ent -continuo us i c -50 m a collector pow er dissipati on( tot al ) p c 300 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 ele ctric al characteristics t a = 25 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo -120 v collector-to-e m itt er bre akdow n voltage v (br)ceo -120 v em itt er-to- base breakdow n voltage v (br)ebo -5.0 v collector cut off current ic bo v cb = -100 v , i e =0 -0.5 a collector cut off current i ebo v ce = -4.0v , i c =0 -0.5 a dc curre nt gain h fe v ce = -60v, i c = -2.0m a 180 820 collector-emit ter sat uration vo ltage v ce(sat) i c =-10 m a, i b = -1.0m a -0.5 v transition frequency f t v ce = -12v, i c = -2m a,f =100m hz 140 mh z 1 23 4 5 unit: mm ic = -50a, i e =0 ic = -1 m a i b =0 i e = -50 a i c =0 mark ing mar king s4 FMS4 s m d ty p e t r a n s i s t o r s s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|
