? semiconductor components industries, llc, 2011 june, 2011 ? rev. 0 1 publication order number: ntp5864n/d ntp5864n power mosfet 60 v, 63 a, 12.4 m features ? low r ds(on) ? high current capability ? avalanche energy specified ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain ? to ? source voltage v dss 60 v gate ? to ? source voltage ? continuous v gs 20 v gate ? to ? source voltage ? non ? repetitive (t p = 10 s) v gs 30 v continuous drain current ? r jc (note 1) steady state t c = 25 c i d 63 a t c = 100 c 45 power dissipation ? r jc (note 1) steady state t c = 25 c p d 107 w t c = 100 c 54 pulsed drain current t p = 10 s i dm 252 a operating junction and storage temperature t j , t stg ? 55 to 175 c source current (body diode) pulsed i s 63 a single pulse drain ? to source avalanche energy ? (l = 0.1 mh) eas 80 mj ias 40 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max units junction ? to ? case (drain) ? steady state (note 1) r jc 1.4 c/w junction ? to ? ambient ? steady state (note 1) r ja 33 c/w 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). device package shipping ordering information http://onsemi.com v (br)dss r ds(on) max i d max (note 1) 60 v 12.4 m @ 10 v 63 a n ? channel d s g NTP5864NG to ? 220 (pb ? free) 50 units / rail to ? 220ab case 221a style 5 1 2 3 4 marking diagram & pin assignment a = assembly location y = year ww = work week g = pb ? free package NTP5864NG ayww 1 gate 3 source 4 drain 2 drain
ntp5864n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 58 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v gate threshold temperature coefficient v gs(th) /t j ? 10 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 20 a 10.2 12.4 m forward transconductance g fs v ds = 15 v, i d = 20 a 10 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 1680 pf output capacitance c oss 189 reverse transfer capacitance c rss 124 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 20 a 31 nc threshold gate charge q g(th) 2.0 gate ? to ? source charge q gs 7.3 gate ? to ? drain charge q gd 10 gate resistance r g 0.5 switching characteristics, v gs = 10 v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 20 a, r g = 2.5 10 ns rise time t r 6.4 turn ? off delay time t d(off) 18 fall time t f 4.6 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 40 a t j = 25 c 0.94 1.2 v t j = 125 c 0.84 reverse recovery time t rr v gs = 0 v, di sd /dt = 100 a/ s, i s = 20 a 24 ns charge time t a 16 discharge time t b 7.9 reverse recovery charge q rr 20 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntp5864n http://onsemi.com 3 typical characteristics 0 25 50 75 100 125 012345 figure 1. on ? region characteristics v ds , drain ? to ? source voltage (v) i d , drain current (a) 5.5 v v gs = 10 v 5.0 v 4.5 v t j = 25 c 0 25 50 75 125 24567 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c figure 2. transfer characteristics v gs , gate ? to ? source voltage (v) i d , drain current (a) 0.010 0.015 0.020 0.025 0.030 0.000 0.005 45678910 figure 3. on ? resistance vs. gate voltage v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) i d = 20 a t j = 25 c 0.0095 0.0100 0.0110 0.0115 10 20 25 30 35 40 45 50 figure 4. on ? resistance vs. drain current i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) v gs = 10 v t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.2 ? 50 ? 25 0 25 50 75 100 125 175 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v i d = 20 a 100 10000 100000 10 20 30 40 50 60 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (v) i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v 55 60 7.5 v 3 15 0.0105 2.0 150 1000 100 7 v 6.5 v
ntp5864n http://onsemi.com 4 typical characteristics 0 500 1000 1500 2000 2500 0 102030405060 figure 7. capacitance variation v ds , drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 q gs q t q gd figure 8. gate ? to ? source vs. total charge q g , total gate charge (nc) v gs , gate ? to ? source voltage (v) i d = 20 a t j = 25 c 1 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = 48 v i d = 20 a v gs = 10 v t d(off) t d(on) t r t f 0 20 40 60 80 100 0.50 0.60 0.70 0.80 1.00 0.90 1.10 figure 10. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) t j = 25 c v gs = 0 v 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms 0 10 20 30 40 50 60 80 25 50 75 100 125 175 avalanche energy (mj) t j , starting junction temperature figure 12. maximum avalanche energy versus starting junction temperature i d = 40 a 30 10 30 50 70 90 0.40 1.20 70 150
ntp5864n http://onsemi.com 5 typical characteristics 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure 13. thermal response t, pulse time (s) r jc(t) ( c/w) effective transient thermal resistance 0.02 0.2 0.01 0.05 duty cycle = 0.5 single pulse 0.1 10 0.01
ntp5864n http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 5: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ntp5864n/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
