BSS315P optimos?-p 2 small-signal-transistor features ? p-channel ? enhancement mode ?logic level (4.5v rated) ? avalanche rated ? qualified according to aec q101 ?100% lead-free; rohs compliant ?halogen-free according to aec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c -1.5 a t a =70 c -1.18 pulsed drain current i d,pulse t a =25 c -6 avalanche energy, single pulse e as i d =-1.5 a, r gs =25 11 mj reverse diode d v /d t d v /d t i d =-1.5 a, v ds =-16v, d i /d t =-200a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v power dissipation 1) p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 0 (<250v) v soldering temperature 260 c c iec climatic category; din iec 68-1 55/150/56 c value 0.5 pg-sot-23 3 1 type package tape and reel information marking lead free packing BSS315P pg-sot23 h6327: 3000 pcs/ reel ycs yes non dry 2 v ds 30 v r ds(on),max v gs =10 v 150 m v gs =4.5 v 270 i d -1.5 a product summary product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
BSS315P parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint 1) - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-11a -2.0 -1.5 -1.0 drain-source leakage current i dss v ds =-30v, v gs =0 v, t j =25 c ---1 a v ds =-30v, v gs =0v, t j =150 c - - -100 gate-source leakage current i gss v gs =-20v, v ds =0v - - -100 na drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-1.1 a - 177 270 m v gs =-10 v, i d =-1.5 a - 113 150 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-1.18 a - 2.7 - s values 1) performed on 40mm 2 fr4 pcb. the traces are 1mm wide, 70 m thick and 20mm long; they are present on both sides of the pcb. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
BSS315P parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 212 282 pf output capacitance c oss -6991 reverse transfer capacitance c rss -5684 turn-on delay time t d(on) - 5.0 - ns rise time t r - 6.5 - turn-off delay time t d(off) - 14.3 - fall time t f - 7.5 - gate charge characteristics gate to source charge q gs - -0.56 - nc gate to drain charge q gd - -1.2 - gate charge total q g - -2.3 - gate plateau voltage v plateau - -2.9 - v reverse diode diode continous forward current i s - - -0.5 a diode pulse current i s,pulse ---6 diode forward voltage v sd v gs =0 v, i f =-1.5 a, t j =25 c - -0.86 -1.1 v reverse recovery time t rr - 8.2 - ns reverse recovery charge q rr - 2.1 - nc v r =10 v, i f =-1.5 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =-15v, v gs =-10 v, i d =-1.5 a, r g =6 v dd =-15 v, i d =-1.5 a, v gs =0 to 5 v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
|
