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IRG7RC07SDPBF
1 www.irf.com 03/09/12 e g n-channel c v ces = 600v i c = 8.5a, t c = 100c v ce(on) typ. =1.2v@i c = 3a g c e gate collector emitter d-pak IRG7RC07SDPBF optimized for line frequency, 50/60hz switching frequency features ? standard speed igbt for switching frequency less than 1khz ? very low v ce (on) ? ultra fast soft recovery diode benefits ? high efficiency for line frequency applications ? higher reliability from reduced conduction losses ? ultra fast diode optimized for high frequency commutation applications ? solar inverters (50/60hz switch) ? welding machine output stage ? steering switch in bldc motor ? induction heating operating in capacitive mode absolute maximum ratings parameter max. units v ce s collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 16 i c @ t c = 100c continuous collector current 8.5 i cm pulse collector current 18 i lm clamped inductive load current 6.0 a i f @ t c = 25c diode continous forward current 16 i f @ t c = 100c diode continous forward current 8.5 i fm diode maximum forward current 16 v ge gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 39 w p d @ t c = 100c maximum power dissipation 16 t j operating junction and -55 to +150 t st g storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 3.2 r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 6.1 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (pcb mount stedy state ) ??? 50 ??? c/w
IRG7RC07SDPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 1mh, r g = 100 . pulse width limited by max. junction temperature. r is measured at t j of approximately 90c. max limit based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250 a v (br)ces / t j temperature coeff. of breakdown voltage ? 0.72 ? v/c v ge = 0v, i c = 250 a (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.2 1.5 i c = 3.0a, v ge = 15v, t j = 25c ?1.2? i c = 3.0a, v ge = 15v, t j = 150c v ge (t h ) gate threshold voltage 3.0 ? 5.5 v v ce = v ge , i c = 100 a v ge (th) / tj threshold voltage temp. coefficient ? -8.3 ? mv/c v ce = v ge , i c = 1.0ma (25c - 150c) gfe forward transconductance ? 4.3 ? s v ce = 50v, i c = 3.0a i ce s collector-to-emitter leakage current ? 1.0 20 v ge = 0v, v ce = 600v ? 100 ? v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 1.4 1.8 i f = 3.0a ?1.1? i f = 3.0a, t j = 150c i ge s gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 13 20 i c = 3.0a q ge gate-to-emitter charge (turn-on) ? 2.0 3.0 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 5.0 7.5 v cc = 400v e on turn-on switching loss ? 80 170 i c = 3.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 620 790 jr g = 100 , l = 1mh, t j = 25c e total total switching loss ? 700 960 e ner gy l o s s es i ncl ude tai l & di o de r ever s e reco ver y t d(on) turn-on delay time ? 20 40 t r rise time ? 10 30 ns i c = 3.0a, v cc = 400v, v ge = 15v t d(off) turn-off delay time ? 580 730 r g = 100 , l = 1mh,t j = 25c t f fall time ? 550 670 e on turn-on switching loss ? 140 ? i c = 3.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 1100 ? jr g = 100 , l = 1mh, t j = 150c e total total switching loss ? 1240 ? e ner gy l o s s es i ncl ude tai l & di o de r ever s e reco ver y t d(on) turn-on delay time ? 20 ? t r rise time ? 15 ? ns i c = 3.0a, v cc = 400v, v ge = 15v t d(off) turn-off delay time ? 870 ? r g = 100 , l = 1mh,t j = 150c t f fall time ? 1020 ? c ies input capacitance ? 350 ? pf v ge = 0v c oes output capacitance ? 22 ? v cc = 30v c re s reverse transfer capacitance ? 7.0 ? f = 1.0mhz t j = 150c, i c = 6a rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v rg = 100 , v ge = +20v to 0v erec reverse recovery energy of the diode ? 21 ? jt j = 150c t rr diode reverse recovery time ? 64 ? ns v cc = 400v, i f = 3.0a i rr peak reverse recovery current ? 7.3 ? a v ge = 15v, rg = 100 , l =1mh conditions v a v
IRG7RC07SDPBF www.irf.com 3 fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 150c; v ge =15v fig. 5 - reverse bias soa t j = 150c; v ge = 20v 25 50 75 100 125 150 t c (c) 0 2 4 6 8 10 12 14 16 18 i c ( a ) 25 50 75 100 125 150 t c (c) 0 10 20 30 40 p t o t ( w ) fig. 1 - typical load current vs. frequency 10 100 1000 v ce (v) 1 10 i c ( a ) 1 10 100 1000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 150c single pulse dc 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 16 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 150c tc = 100c vcc = 400v gate drive as specified power dissipation = 16w 60% of rated voltage i ideal diodes square wave:
IRG7RC07SDPBF 4 www.irf.com fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20 s fig. 9 - typ. diode forward characteristics tp = 20 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 0 5 10 15 20 v ge (v) 0.5 1.0 1.5 2.0 2.5 3.0 v c e ( v ) i ce = 1.5a i ce = 3.0a i ce = 6.0a 0 5 10 15 20 v ge (v) 0.5 1.0 1.5 2.0 2.5 3.0 v c e ( v ) i ce = 1.5a i ce = 3.0a i ce = 6.0a fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s 0 2 4 6 8 10 v ce (v) 0 1 2 3 4 5 6 7 8 9 i c e ( a ) vge top 18v 15v 12v 10v 9.0v 8.0v 7.0v bottom 6.0v 0 2 4 6 8 10 v ce (v) 0 1 2 3 4 5 6 7 8 9 i c e ( a ) vge top 18v 15v 12v 10v 9.0v 8.0v 7.0v bottom 6.0v 0.0 0.5 1.0 1.5 2.0 2.5 v f (v) 0 1 2 3 4 5 6 7 8 9 i f ( a ) -40c 25c 150c 0 2 4 6 8 10 v ce (v) 0 1 2 3 4 5 6 7 8 9 i c e ( a ) vge top 18v 15v 12v 10v 9.0v 8.0v 7.0v bottom 6.0v
IRG7RC07SDPBF www.irf.com 5 fig. 14 - typ. energy loss vs. i c t j = 150c; l = 1mh; v ce = 400v, r g = 100 ; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c; l = 1mh; v ce = 400v, r g = 100 ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c; l = 1mh; v ce = 400v, i ce = 3.0a; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 150c; l = 1mh; v ce = 400v, i ce = 3.0a; v ge = 15v fig. 12 - typical v ce vs. v ge t j = 150c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20 s 0 5 10 15 20 v ge (v) 0.5 1.0 1.5 2.0 2.5 3.0 v c e ( v ) i ce = 1.5a i ce = 3.0a i ce = 6.0a 01234567 i c (a) 10 100 1000 10000 e n e r g y ( j ) e off e on 0 1 2 3 4 5 6 7 i c (a) 1 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 140 160 r g ( ) 10 100 1000 10000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 120 140 160 r g ( ) 1 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 345678 v ge (v) 0 1 2 3 4 5 6 7 8 9 i c e ( a ) t j = 25c t j = 150c
IRG7RC07SDPBF 6 www.irf.com fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 3.0a; t j = 150c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 19 - typ. diode i rr vs. r g t j = 150c 0 1 2 3 4 5 6 7 8 i f (a) 4 6 8 10 12 14 i r r ( a ) r g = 50 r g = 22 r g = 150 r g = 100 0 20 40 60 80 100 120 140 160 r g ( ) 6.5 7.0 7.5 8.0 8.5 9.0 9.5 i r r ( a ) 200 300 400 500 di f /dt (a/ s) 6.5 7 7.5 8 8.5 9 9.5 i r r ( a ) 1 2 3 4 5 6 7 8 9 i f (a) 0 20 40 60 80 e n e r g y ( j ) r g = 150 r g = 22 r g = 50 r g = 100 100 200 300 400 500 600 di f /dt (a/ s) 100 200 300 400 500 600 q r r ( c ) 22 150 100 50 3.0a 6.0a 1.5a
IRG7RC07SDPBF www.irf.com 7 fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0491 0.000007 1.4490 0.000140 1.1262 0.001385 0.5772 0.009827 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 2.357 0.000433 2.512 0.001951 1.231 0.015296 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri fig. 24 - typical gate charge vs. v ge i ce = 3.0a 0 2 4 6 8 10 12 14 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
IRG7RC07SDPBF 8 www.irf.com 1k vc c dut 0 l l rg 80 v dut 480v fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg vcc diode clamp / du t du t / driver - 5v fig.c.t.3 - switching loss circuit rg vcc dut r = v cc i cm fig.c.t.4 - resistive load circuit
IRG7RC07SDPBF www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.3 -100 0 100 200 300 400 500 -0.8 -0.2 0.4 1 1.6 2.2 2.8 3.4 time( s) v ce (v) -2 0 2 4 6 8 10 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 3.95 4 4.05 4.1 4.15 4.2 4.25 time ( s) v ce (v) -2 0 2 4 6 8 10 i ce (a) test current 90% i ce 5% v ce 10% i ce tr eon loss -8 -6 -4 -2 0 2 4 6 -10123 time ( s) v f (v) peak i rr t rr q rr 10% pea k irr
IRG7RC07SDPBF 10 www.irf.com

international as s embled on ww 16, 2001 in the assembly line "a" or note: "p" in ass embly line pos ition example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = de s i gn at e s l e ad- f r e e a = as s e mb l y s i t e code part number we e k 16 dat e code year 1 = 2001 rectifier international logo lot code assembly 34 12 irfr120 116a line a 34 rectifier logo irfr120 12 as s e mb l y lot code ye ar 1 = 2001 dat e code part number we e k 16 "p" in assembly line position indicates "l ead-f r ee" qual i fi cati on to the cons umer - l evel p = de s i gn at e s l e ad- f r e e product qualified to the consumer level (optional)

IRG7RC07SDPBF www.irf.com 11 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2012 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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