AO4423 30v p-channel mosfet product summary v d s (v) = -30v i d = -17a (v gs = -20v) r ds(on) < 6.2m w (v gs = -20v) r ds(on) < 7.2m w (v gs = -10v) esd protected 100% uis tested 100% rg tested (note *) general description t he AO4423 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. * rohs and halogen-free compliant soic-8 t op view bottom view d d d d s s s g s g d symbol v ds v gs i dm t j , t stg symbol typ max 26 40 50 75 r q j l 14 24 i d -17 - 182 pulsed drain current b power dissipation a t a =25c absolute maximum ratings t a =25c unless otherwise noted v v -14 continuous drain current af maximum u nits parameter t a =25c t a =70c 25 gate-source voltage drain-source voltage -30 a w p d 3.1 2 t a =70c t hermal characteristics parameter junction and storage temperature range c units maximum junction-to-ambient af t 10s -55 to 150 r q j a c/w m aximum junction-to-ambient a steady-state c/w maximum junction-to-lead c steady-state c/w s rev.11.0 june 2013 www.aosmd,com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
symbol min typ max units bv dss -30 v -1 t j =55c -5 1 m a 10 m a v gs(th) -1.5 -2.1 -2.6 v i d(on) -182 a 5.1 6.2 t j =125c 7.4 9 5.9 7.2 m w 7.5 9.5 m w g fs 48 s v sd -0.71 -1 v i s -4.2 a c iss 2527 3033 pf c oss 583 pf c rss 397 556 pf r g 2.1 4.3 6.4 w q g 47 57 nc q gs 8 nc q gd 14 nc v ds =-5v, i d =-15a v gs =-6v, i d =-10a dynamic parameters r ds(on) static drain-source on-resistance m w i gss gate-body leakage current reverse transfer capacitance total gate charge forward transconductance gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, v ds =-15v, i d =-15a gate drain charge switching parameters drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v i dss gate threshold voltage v ds =v gs i d =-250 m a v gs =-10v, v ds =-5v v gs =-20v, i d =-15a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =0v, v gs =25v m a zero gate voltage drain current v ds =-30v, v gs =0v v ds =0v, v gs =20v output capacitance v gs =-10v, i d =-15a i s =-1a,v gs =0v v gs =0v, v ds =-15v, f=1mhz diode forward voltage maximum body-diode continuous current input capacitance rev.11.0 june 2013 www.aosmd,com q gd 14 nc t d(on) 12 ns t r 8 ns t d(off) 54 ns t f 87 ns t rr 26.1 32 ns q rr 12.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice turn-on delaytime turn-off delaytime v gs =-10v, v ds =-15v, r l =1.0 w , r gen =3 w turn-off fall time gate drain charge turn-on rise time body diode reverse recovery charge i f =-15a, di/dt=100a/ m s i f =-15a, di/dt=100a/ m s body diode reverse recovery time a: the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. note *: this device is guaranteed rg 100% tested after date code 8v11 (jan 1st 2008) rev.11.0 june 2013 www.aosmd,com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics 0 1 0 20 30 40 50 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-3v -3.5v - 4v -6v -10v -4.5v 0 1 0 20 30 40 50 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 4 6 8 1 0 0 5 10 15 20 25 30 r ds(on) (m w w w w ) 0.9 1 .0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 25 50 75 100 125 150 175 normalized on-resistance v g s =-20v i d = -15a v g s =-10v i d = -15a v g s =-6v i d = -10a 25 c 125 c v d s =-5v v gs =-6v v gs =-10v v gs =-20v rev.11.0 june 2013 www.aosmd,com -15 -12.8 4 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1 .0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.9 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 4 6 8 1 0 12 14 16 4 8 12 16 20 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = -15a 25 c 125 c rev.11.0 june 2013 www.aosmd,com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 10 20 30 40 50 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics 0 5 00 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics ciss 1 10 1 00 1000 10000 power (w) c oss c rss 0.0 0.1 1 .0 10.0 100.0 1000.0 -i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc r d s(on) limited t j (max) =150 c t a =25 c v d s =-15v i d =-15a t j (max) =150 c t a =25 c 10 m s rev.11.0 june 2013 www.aosmd,com -15 -12.8 1 0 .00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance 0.0 0.1 0.1 1 1 0 100 -v ds (volts) figure 9: maximum forward biased safe dc t j(max) =150 c t a = 25 c single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d rev.11.0 june 2013 www.aosmd,com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
v d c ig v ds d u t v d c v gs v gs q g q gs q gd c harge g ate c harge test c ircuit & w aveform - + - + -10v id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 1 0% r on d(off) f off d(on) rev.11.0 june 2013 www.aosmd,com vdd vgs id vgs rg dut vdc vgs vds id vgs - + bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & w aveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev.11.0 june 2013 www.aosmd,com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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