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1 www.irf.com ? 2013 international rectifier june 12, 2013 IRGP4262DPBF irgp4262d-epbf base part number package type standard pack orderable part number form quantity IRGP4262DPBF to-247ac tube 25 IRGP4262DPBF irgp4262d-epbf to-247ad t ube 25 irgp4262d-epbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 650 v i c @ t c = 25c continuous collector current 60 a i c @ t c = 100c continuous collector current 40 i cm pulse collector current, v ge =20v 96 i lm clamped inductive load current, v ge =20v ? 96 i f @ t c = 25c diode continuous forward current 45 i f @ t c = 100c diode continuous forward current 27 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 250 w p d @ t c = 100c maximum power dissipation 125 t j operating junction and -40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.6 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 1.6 v ces = 650v i c = 40a, t c =100c t sc ?? 5.5s, t j(max) = 175c v ce(on) typ. = 1.7v @ i c = 24a applications ? industrial motor drive ? ups features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 5.5s short circuit soa square rbsoa maximum junction temperature 175c increased reliability positive v ce (on) temperature coefficient excellent current sharing in parallel operation rugged transient performance g c e gate collector emitter g g e c g g c e insulated gate bipolar transistor with ultrafast soft recovery diode IRGP4262DPBF to-247ac irgp4262d-epbf to-247ad e g n-channel c
IRGP4262DPBF/irgp4262d-epbf 2 www.irf.com ? 2013 international rectifier june 12, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 650 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.86 ? v/c v ge = 0v, i c = 2ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.1 v i c = 24a, v ge = 15v, t j = 25c ? 2.1 ? i c = 24a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 5.5 ? 7.7 v v ce = v ge , i c = 700a ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -20 ? mv/c v ce = v ge , i c = 700a (25c-150c) gfe forward transconductance ? 16 ? s v ce = 50v, i c = 24a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 35 a v ge = 0v, v ce = 650v ? 530 ? v ge = 0v, v ce = 650v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v v f ? 1.6 2.4 v i f = 24a ? 1.26 ? i f = 24a, t j = 175c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 47 70 nc i c = 24a q ge gate-to-emitter charge (turn-on) ? 15 23 v ge = 15v q gc gate-to-collector charge (turn-on) ? 20 30 v cc = 400v e on turn-on switching loss ? 520 740 j i c = 24a, v cc = 400v, v ge =15v r g = 10 ? , l = 0.40h, t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss ? 240 350 e total total switching loss ? 760 1090 t d(on) turn-on delay time ? 24 40 ns t r rise time ? 27 45 t d(off) turn-off delay time ? 73 90 t f fall time ? 23 40 e on turn-on switching loss ? 1120 ? j i c = 24a, v cc = 400v, v ge =15v r g = 10 ? , l = 0.40h, t j = 175c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss ? 475 ? e total total switching loss ? 1595 ? t d(on) turn-on delay time ? 22 ? ns t r rise time ? 28 ? t d(off) turn-off delay time ? 88 ? t f fall time ? 74 ? c ies input capacitance ? 1550 ? v ge = 0v c oes output capacitance ? 124 ? pf v cc = 30v c res reverse transfer capacitance ? 43 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 96a full square v cc = 480v, vp 650v v ge = +20v to 0v scsoa short circuit safe operating area 5.5 ? ? s t j = 150c,v cc = 400v, vp 650v v ge = +15v to 0v erec reverse recovery energy of the diode ? 292 ? j t j = 175c t rr diode reverse recovery time ? 170 ? ns v cc = 400v, i f = 24a i rr peak reverse recovery current ? 17 ? a v ge = 15v, rg = 10 ? diode forward voltage drop notes: ? v cc = 80% (v ces ), v ge = 20v. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement .
IRGP4262DPBF/irgp4262d-epbf 3 www.irf.com ? 2013 international rectifier june 12, 2013 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v 0.1 1 10 100 f , frequency ( khz ) 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 108.7w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature
IRGP4262DPBF/irgp4262d-epbf 4 www.irf.com ? 2013 international rectifier june 12, 2013 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0123 v f (v) 0 20 40 60 80 100 i f ( a ) -40c 25c 175c fig. 9 - typ. diode forward voltage drop characteristics 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
IRGP4262DPBF/irgp4262d-epbf 5 www.irf.com ? 2013 international rectifier june 12, 2013 0 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 468101214 v ge (v) 0 20 40 60 80 100 i c e ( a ) t j = 25c t j = 175c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. i c t j = 175c; l = 0.40mh; v ce = 400v, r g = 10 ? ; v ge = 15v 0 20406080100 rg ( ? ) 0 400 800 1200 1600 2000 2400 e n e r g y ( j ) e off e on fig. 16 - typ. energy loss vs. r g t j = 175c; l = 0.40mh; v ce = 400v, i ce = 24a; v ge = 15v 0 1020304050 i c (a) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e off e on fig. 14 - typ. energy loss vs. i c t j = 175c; l = 0.40mh; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 175c; l = 0.40mh; v ce = 400v, i ce = 24a; v ge = 15v 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 12 - typical v ce vs. v ge t j = 175c
IRGP4262DPBF/irgp4262d-epbf 6 www.irf.com ? 2013 international rectifier june 12, 2013 0 200 400 600 800 1000 di f /dt (a/s) 1.0 1.5 2.0 2.5 q r r ( c ) 22 ? 47 ? 10 ? 100 ? 12a 24a 48a 8 1012141618 v ge (v) 3 6 9 12 15 18 21 t i m e ( s ) 20 40 60 80 100 120 140 c u r r e n t ( a ) t sc i sc fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c 0 10 20 30 40 50 i f (a) 0 100 200 300 400 e n e r g y ( j ) r g = 22 ? r g = 47 ? r g = 100 ? r g = 10 ? fig. 22 - typ. diode e rr vs. i f t j = 175c 0 200 400 600 800 1000 di f /dt (a/s) 10 11 12 13 14 15 16 17 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 24a; t j = 175c fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 150c 10 15 20 25 30 35 40 45 50 i f (a) 10 11 12 13 14 15 16 17 i r r ( a ) r g = 47 ? r g = 22 ? r g = 100 ? r g = 10 ? fig. 18 - typ. diode i rr vs. i f t j = 175c 0 20 40 60 80 100 r g ( ?? 10 11 12 13 14 15 16 17 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 175c
IRGP4262DPBF/irgp4262d-epbf 7 www.irf.com ? 2013 international rectifier june 12, 2013 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26 - maximum transient thermal impedance, junction-to-case (igbt) fig. 27 - maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.026766 0.000026 0.573978 0.000561 0.655762 0.005131 0.344981 0.039505 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 1020304050 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 25 - typical gate charge vs. v ge i ce = 24a ri (c/w) ? i (sec) ? 0.014255 0.000015 0.163283 0.000127 0.257883 0.003125 0.164579 0.019104 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
IRGP4262DPBF/irgp4262d-epbf 8 www.irf.com ? 2013 international rectifier june 12, 2013 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
IRGP4262DPBF/irgp4262d-epbf 9 www.irf.com ? 2013 international rectifier june 12, 2013 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.3 -0.05 0.2 0.45 0.7 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.5 0 0.5 1 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -30 -20 -10 0 10 20 30 40 -0.15 0.00 0.15 0.30 i f (a) time (s) peak i rr t rr q rr -25 0 25 50 75 100 125 150 -100 0 100 200 300 400 500 600 -5.0 0.0 5.0 10.0 ice (a) vce (v) time (s) vce ice
IRGP4262DPBF/irgp4262d-epbf 10 www.irf.com ? 2013 international rectifier june 12, 2013 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
IRGP4262DPBF/irgp4262d-epbf 11 www.irf.com ? 2013 international rectifier june 12, 2013 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part num ber date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lo t co de n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see view "b" b4 b a ? .010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a view: "b" section: c-c, d-d, e-e (b, b2, b4) (c) base meta l plating view: "a" - "a"
IRGP4262DPBF/irgp4262d-epbf 12 www.irf.com ? 2013 international rectifier june 12, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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