page : 1 rev. 0.09a : 2011.09.14 rev. 0.09a 2011.09.14 r1qha36**cb* / r1qla36**cb* series features ? power supply ? 1.8 v for core (v dd ), 1.4 v to v dd for i/o (v ddq ) ? clock ? fast clock cycle time for high bandwidth ? two input clocks (k and /k) for precise ddr timing at clock rising edges only ? two output echo clocks (cq and /cq) simplify data capture in high-speed systems ? clock-stop capability with p s restart ? i/o ? common data input/output bus ? pipelined double data rate operation ? hstl i/o ? user programmable output impedance ? dll/pll circuitry for wide output data valid wi ndow and future frequency scaling ? data valid pin (qvld) to indicate valid data on the output ? function ? two-tick burst for low ddr transaction size ? internally self-timed write control ? simple control logic for easy depth expansion ? jtag 1149.1 compatible test access port ? package ? 165 fbga package (15 x 17 x 1.4 mm) description the r1q # a3636 is a 1,048,576-word by 36-bit and the r1q # a3618 is a 2,097,152-word by 18-bit synchronous double data rate static ram fabricated with advanced cmos technology using full cmos six-transistor memory cell. it integrates unique synchronous pe ripheral circuitry and a burst counter. all input registers are controlled by an input clock pair (k and /k) and are latched on the positive edge of k and /k. these products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. these products are packaged in 165-pin plastic fbga package. # = b: latency =2.5, w/o odt # = h: latency =2.0, w/o odt # = e: latency =2.5, w/ odt # = l: latency =2.0, w/ odt 36-mbit ddrii+ sram 2-word burst r1qba3636cbg / r1qba3618cbg / r1qba3609cbg r1qea3636cbg / r1qea3618cbg / r1qea3609cbg r1qha3636cbg / r1qha3618cbg / r1qha3609cbg R1QLA3636CBG / r1qla3618cbg / r1qla3609cbg notes: 1. qdr rams and quad data rate rams comprise a new fam ily of products devel oped by cypress semiconductor, idt, samsung, and renesas electronics corp. (qdr co-development team) 2. the specifications of this device are subject to ch ange without notice. please contact your nearest renesas electronics sales office regarding specifications. 3. refer to " http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp " for the latest and detailed information. 4. descriptions about x9 parts in this datasheet are just for reference. r10ds0162ej0009 r10ds0162ej0009
page : 2 rev. 0.09a : 2011.09.14 r1qha36**cb* / r1qla36**cb* series part number definition common 0 q % q o o g p v u 0 q % q o o g p v u 0 q % q o o g p v u 4 4 g p g u c u / g o q t [ 2 t g h k z # 8 f f 8 ( t g s w g p e [ / * \ 3 3 & |