si4882dy vishay siliconix new product document number: 70878 s-00271erev. a, 26-apr-99 www.vishay.com faxback 408-970-5600 2-1 n-channel reduced q g , fast switching mosfet v ds (v) r ds(on) ( ) i d (a) 30 0.0105 @ v gs = 10 v 11 30 0.0205 @ v gs = 4.5 v 8 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d d s s
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 11 a continuous drain current (t j = 150 c) a , b t a = 70 c i d 9 a pulsed drain current i dm 50 a continuous source current (diode conduction) a, b i s 2.3 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a , b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit maximum junction - to - ambient (mosfet) a t 10 sec r thja 35 50 c/w m ax i mum j unc ti on- t o- a m bi en t (mosfet) a steady state r thja 68 80 c/w maximum junction-to-foot st ea d y st a t e r thjf 19 25 notes a. surface mounted on fr4 board. b. t 10 sec.
si4882dy vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 70878 s-00271erev. a, 26-apr-99
|