? semiconductor components industries, llc, 2012 november, 2012 ? rev. 6 1 publication order number: 2N6400/d 2N6400 series silicon controlled rectifiers reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half ? wave silicon gate ? controlled, solid ? state devices are needed. features ? glass passivated junctions with center gate geometry for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 v ? these are pb ? free devices maximum ratings * (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state voltage (note 1) (t j = 40 to 125 c, sine wave 50 to 60 hz; gate open) 2N6400 2n6401 2n6402 2n6403 2n6404 2n6405 v drm, v rrm 50 100 200 400 600 800 v on-state current rms (180 conduction angles; t c = 100 c) i t(rms) 16 a average on-state current (180 conduc- tion angles; t c = 100 c) i t(av) 10 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 25 c) i tsm 160 a circuit fusing considerations (t = 8.3 ms) i 2 t 145 a 2 s forward peak gate power (pulse width 1.0 s, t c = 100 c) p gm 20 w forward average gate power (t = 8.3 ms, t c = 100 c) p g(av) 0.5 w forward peak gate current (pulse width 1.0 s, t c = 100 c) i gm 2.0 a operating junction temperature range t j ? 40 to +125 c storage temperature range t stg ? 40 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 16 amperes rms 50 thru 800 volts k g a pin assignment 1 2 3 anode gate cathode 4 anode to ? 220ab case 221a style 3 1 2 3 4 marking diagram 2n640xg ayww x = 0, 1, 2, 3, 4 or 5 a = assembly location y = year ww = work week g = pb ? free package see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information http://onsemi.com
2N6400 series http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.5 c/w maximum lead temperature for soldering purposes 1/8 in from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics * peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm ? ? ? ? 10 2.0 a ma on characteristics *peak forward on ? state voltage (i tm = 32 a peak, pulse width 1 ms, duty cycle 2%) v tm ? ? 1.7 v * gate trigger current (continuous dc) t c = 25 c (v d = 12 vdc, r l = 100 )t c = ? 40 c i gt ? ? 9.0 ? 30 60 ma * gate trigger voltage (continuous dc) (v d = 12 vdc, r l = 100 )t c = 25 c t c = ? 40 c v gt ? ? 0.7 ? 1.5 2.5 v gate non ? trigger voltage (v d = 12 vdc, r l = 100 ), t c = +125 c v gd 0.2 ? ? v * holding current t c = 25 c (v d = 12 vdc, initiating current = 200 ma, gate open) *t c = ? 40 c i h ? ? 18 ? 40 60 ma turn-on time (i tm = 16 a, i gt = 40 madc, v d = rated v drm ) t gt ? 1.0 ? s turn-off time (i tm = 16 a, i r = 16 a, v d = rated v drm ) t c = 25 c t j = +125 c t q ? ? 15 35 ? ? s dynamic characteristics critical rate ? of ? rise of off-state voltage (v d = rated v drm , exponential waveform) t j = +125 c dv/dt ? 50 ? v/ s *indicates jedec registered data.
2N6400 series http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) c t , maximum case temperature ( c) 6.0 120 100 112 128 60 = 30 0 1.0 2.0 3.0 8.0 = conduction angle figure 1. average current derating i t(av) , average on\state forward current (amps) 90 p , average power (watts) (av) 12 0 4.0 8.0 t j 125 c figure 2. maximum on ? state power dissipation i t(av) , average on\state forward current (amps) 7.0 0 1.0 2.0 3.0 8.0 = conduction angle 4.0 5.0 7.0 180 dc 10 2.0 6.0 14 16 4.0 5.0 6.0 60 = 30 90 180 dc 124 104 108 116 10 9.0 120 9.0 10 120
2N6400 series http://onsemi.com 4 figure 3. on ? state characteristics figure 4. maximum non ? repetitive surge current figure 5. thermal response 1.0 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 0.8 0.1 z jc(t) = r jc ? r(t) 1.0 120 surge is preceded and followed by rated current t j = 125 c f = 60 hz number of cycles 130 140 150 160 20 2.0 3.0 4.0 6.0 8.0 10 0.4 0.01 t, time (ms) 3.0 5.0 110 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v tm , instantaneous on-state voltage (volts) 1.6 2.4 2.0 4.0 4.4 1.2 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) tm i , instantaneous on-state forward current (amps) t j = 25 c 125 c 1 cycle 200 2.8 3.6 3.2
2N6400 series http://onsemi.com 5 i , holding current (ma) h typical characteristics t j , junction temperature ( c) 100 10 1 10 1 100 figure 6. typical gate trigger current versus pulse width 30 50 20 10 5.0 70 7.0 125 110 80 65 50 35 5 -10 -25 20 t j , junction temperature ( c) 200 100 50 20 10 5.0 0.2 1.0 0.5 2.0 pulse width (ms) i gt i gt v gt 125 110 95 80 50 35 5 -40 0.8 -10 -25 20 t j , junction temperature ( c) 0.6 0.4 0.2 , peak gate current (ma) 3.0 100 , gate trigger voltage (volts) 1.0 t j = -40 c 25 c 125 c , gate trigger current (ma) -40 off\state voltage = 12 v r l = 50 2.0 1.0 figure 7. typical gate trigger current versus junction temperature figure 8. typical gate trigger voltage versus junction temperature figure 9. typical holding current versus junction temperature 95 65 0.9 0.7 0.5 0.3 125 110 95 80 50 35 5 -40 -10 -25 20 65
2N6400 series http://onsemi.com 6 ordering information device package shipping ? 2N6400g to ? 220ab (pb ? free) 500 units / box 2n6401g to ? 220ab (pb ? free) 2n6402g to ? 220ab (pb ? free) 2n6403g to ? 220ab (pb ? free) 2n6403tg to ? 220ab (pb ? free) 50 units / rail 2n6404g to ? 220ab (pb ? free) 500 units / box 2n6405g to ? 220ab (pb ? free)
2N6400 series http://onsemi.com 7 package dimensions to ? 220 case 221a ? 07 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 ? t ? seating plane s r j u t c style 3: pin 1. cathode 2. anode 3. gate 4. anode on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 2N6400/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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