2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD2121S features low frequency power amplifier. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5v collector current i c 2.5 a peak collector current i cp 3a collector power dissipation t c =25 p c 18 w junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c =1ma,i e =0 35 v collector to emitter breakdown voltage v (br)ceo i c =10ma,r be = 35 v emitter to base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cutoff current i cbo v cb =35v,i e =0 20 a v ce =2v,i c = 0.5 a 60 320 v ce =2v,i c =1.5a 20 base to emitter voltage * v be v ce =2v,i c = 1.5 a 1.5 v collector to emitter saturation voltage * v ce(sat) i c =2a,i b = 0.2 a 1.0 v * pulse test. dc current transfer ratio * h fe h fe classification marking b c d hfe 60 120 100 200 160 320 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123
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