smd type ic smd type ic features generation v technology ultra low on-resistance dual n-channel mosfet surface mount available in tape & reel dynamic dv/dt rating fast switching absolute maximum ratings ta = 25 parameter symbol rating unit 10 sec. pulsed drain current, v gs @4.5v,ta=25 i d 5.7 continuous drain current, v gs @4.5v,ta=25 i d 5.2 continuous drain current, v gs @4.5v,t c =70 i d 4.1 pulsed drain current*1 i dm 21 power dissipation ta = 25 p d 2w linear derating factor 0.016 w/ gate-to-source voltage v gs 12 v peak diode recovery dv/dt*2 dv/dt 5 v/ns operating junction and storage temperature range t j ,t stg -55 to + 150 maximum junction-to-ambient *3 r ja 62.5 /w *1 repetitive rating; pulse width limited by max. junction temperature. * 2i sd 2.6a, d i /d t 100a/ s, v dd v (br)dss ,t j 150 *3 surface mounted on fr-4 board, t 10sec. a 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KRF7301 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
smd type ic smd type ic KRF7301 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = 250a 20 v breakdown voltage temp. coefficient v(br)dss / t j i d = 1ma,reference to 25 0.044 v/ v gs =4.5v,i d = 2.6a*1 0.050 v gs =2.7v,i d = 2.2a*1 0.070 gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 0.70 v forward transconductance g fs v ds = 15v, i d = 2.6a*1 8.3 s v ds = 16v, v gs =0v 1.0 v ds = 16v, v gs =0v,t j = 125 25 gate-to-source forward leakage v gs = 12v 100 gate-to-source reverse leakage v gs = -12v -100 total gate charge q g i d =2.6a 20 gate-to-source charge q gs v ds = 16v 2.2 gate-to-drain ("miller") charge q gd v gs =4.5v,*1 8.0 turn-on delay time t d(on) v dd = 10v 9.0 rise time t r i d =2.6a 42 turn-off delay time t d(off) r g =6.0 32 fall time t f r d =3.8 *1 51 intermal drain inductance l d 4.0 internal source inductance l s 6.0 input capacitance c iss v gs = 0v 660 output capacitance c oss v ds = 15v 280 reverse transfer capacitance c rss f = 1.0mhz 140 continuous source current body diode) i s 2.5 pulsed source current body diode) *2 i sm 21 diode forward voltage v sd t j =25 ,i s =1.8a,v gs =0v*1 1.0 v reverse recovery time t rr t j =25 ,i f =2.6a 29 44 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 22 33 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) *1 pulse width 300 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax pf a i gss nh na nc i dss ns r ds(on) static drain-to-source on-resistance drain-to-source leakage current a 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
|
