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cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 1/13 MTC3586DFA6 cystek product specification n- and p-channel enhancement mode mosfet MTC3586DFA6 n-ch p-ch bv dss 20v -20v i d 5a(v gs =4.5v) -3.3a(v gs =-4.5 v) 27m (v gs =4.5v) 78m (v gs =-4.5v) 37m (v gs =2.5v) 115m (v gs =-2.5v) r dson ( typ .) 82m (v gs =1.5v) description 280m (v gs =-1.5v) the MTC3586DFA6 consists of a n- channel and a p-channel enhancement-mode mosfet in a single dfn2*2-6l package, providing the designer with th e best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the dfn2*2-6l package is universally preferred for a ll commercial-industrial su rface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTC3586DFA6-0-t1-g dfn2 2-6l (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel MTC3586DFA6 dfn2 2-6l g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 2/13 MTC3586DFA6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 20 -20 v gate-source voltage v gs 12 12 v continuous drain current @t a =25 c (note 1) i d 5 -3.3 a continuous drain current @t a =70 c (note 1) i d 4 -2.6 a pulsed drain current (note 2) i dm 20 -20 a pd 1.38 w total power dissipation (note 1) linear derating factor 0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec 2. pulse width limited by maximum junction temperature n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, i d =250 a ? bv dss / ? tj - 0.02 - v/ c reference to 25c, i d =1ma v gs(th) 0.5 0.7 1.2 v v ds =v gs , i d =250 a i gss - - 100 na v gs =12v, v ds =0 - - 1 v ds =20v, v gs =0 i dss - - 10 a v ds =16v, v gs =0, tj=70c - 27 40 i d =3.5a, v gs =4.5v - 37 50 i d =1.2a, v gs =2.5v *r ds(on) - 82 105 m i d =0.5a, v gs =1.5v *g fs - 7 - s v ds =5v, i d =3a dynamic ciss - 423 - coss - 50 - crss - 48 - pf v ds =20v, v gs =0, f=1mhz *t d(on) - 6 - *t r - 8 - *t d(off) - 11 - *t f - 10 - ns v ds =15v, i d =1a, v gs =5v, r g =3.3 , r d =15 *qg - 6 - *qgs - 0.8 - *qgd - 2.5 - nc v ds =16v, i d =3a, v gs =4.5v source-drain diode *v sd - 0.77 1.2 v v gs =0v, i s =1.2a *trr - 16 - ns *qrr - 8 - nc i s =3a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 3/13 MTC3586DFA6 cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -20 - - v v gs =0, i d =-250 a ? bv dss / ? tj - -0.01 - v/ c reference to 25c, i d =-1ma v gs(th) - -0.8 -1.2 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =12v, v ds =0 - - -1 v ds =-20v, v gs =0 i dss - - -25 a v ds =-16v, v gs =0, tj=70 c - 78 105 i d =-2.5a, v gs =-4.5v - 115 150 i d =-2a, v gs =-2.5v *r ds(on) - 280 350 m i d =-0.5a, v gs =-1.5v *g fs - 5 - s v ds =-5v, i d =-2a dynamic ciss - 429 - coss - 45 - crss - 41 - pf v ds =-20v, v gs =0, f=1mhz *t d(on) - 6 - *t r - 17 - *t d(off) - 16 - *t f - 5 - ns v ds =-10v, i d =-1a, v gs =-10v, r g =3.3 , r d =10 *qg - 6 - *qgs - 0.8 - *qgd - 2.4 - nc v ds =-16v, i d =-2a, v gs =-4.5v source-drain diode *v sd - -0.82 -1.2 v v gs =0v, i s =-1.2a *trr - 20 - ns *qrr - 15 - nc i s =-2a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 80 c/w thermal resistance, junction-to-ambient, max r ja 90 (note ) c/w note :.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 195 c/w when mounted on minimum copper pad
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 4/13 MTC3586DFA6 cystek product specification n-channel typical characteristics typical output characteristics 0 4 8 12 16 20 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs =1.5v v gs =2v 4.5v, 3.5v, 3v, 2.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =1.5v v gs =4.5v v gs =2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 012345 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 01234 5 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =3.5a r ds( on) @tj=25c :27m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =3.5a
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 5/13 MTC3586DFA6 cystek product specification n-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =90c/w gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =3a v ds =16v v ds =10v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s ta=25c, tj=150c, v gs =10v, r ja =90c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =90c/w
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 6/13 MTC3586DFA6 cystek product specification n-channel typical characteristics(cont.) transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =9 0c/w
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 7/13 MTC3586DFA6 cystek product specification p-channel typical characteristics typical output characteristics 0 4 8 12 16 20 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =3v -v gs =2v -v gs =4v -v gs =5v -v gs =1v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-2v v gs =-1.5v v gs =-2.5v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 01234 5 0 tj=25c tj=150c v gs =0v drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-2.5a v gs =-4.5v, i d =-2.5a r ds( on) @tj=25c : 79m
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 8/13 MTC3586DFA6 cystek product specification p-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) ,normalized threshold voltage i d =-250 a single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =90c/w gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v v ds =-16v i d =-2a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s r ds( on) limited t a =25c, tj=150c, v gs =-10v, r ja =90c/w single pulse maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =90c/w
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 9/13 MTC3586DFA6 cystek product specification p-channel typical characteristics(cont.) transient thermal response curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =90 c/w recommended soldering footprint
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 10/13 MTC3586DFA6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 11/13 MTC3586DFA6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 12/13 MTC3586DFA6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c835dfa6 issued date : 2013.06.03 revised date : 2013.10.30 page no. : 13/13 MTC3586DFA6 cystek product specification dfn2 2-6l dimension marking: mtc4512 s1 g1 d2 d1 g2 s2 3586 device name date code 6-lead dfn2 2-6l plastic surface mounted package cystek package code: dfa6 style: pin 1. source1(s1) pin 2. gate 1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) pin 6. drain1 (d1) millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.900 0.028 0.035 e1 0.900 1.100 0.035 0.043 a1 0.000 0.050 0.000 0.002 k 0.200 - 0.008 - a3 0.203 ref 0.008 ref b 0.250 0.350 0.010 0.014 d 1.950 2.050 0.077 0.081 e 0.650 typ 0.026 typ e 1.950 2.050 0.077 0.081 l 0.200 0.300 0.008 0.012 d1 0.570 0.770 0.022 0.030 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead :pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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