WNM4006 single n-channel, 45v, 1.7a, power mosfet descriptions the WNM4006 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WNM4006 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging pin configuration (top view) w46* w46 = device code * = month (a~z) marking order information device package shipping WNM4006-3/tr sot-23 3000/reel&tape v ds (v) rds(on) (
) 0.126@ v gs =10v 0.142@ v gs =4.5v 0.147@ v gs =4.0v 45 0.208@ v gs =2.5v 1 g 2 s d 3 sot-23 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 45 gate-source voltage v gs 20 v t a =25c 1.7 1.5 continuous drain current a t a =70c i d 1.3 1.2 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 1.5 1.4 continuous drain current b t a =70c i d 1.2 1.1 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 8 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 120 145 junction-to-ambient thermal resistance a steady state r ja 132 170 t ? 10 s 145 174 junction-to-ambient thermal resistance b steady state r ja 158 202 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. WNM4006 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 45 v zero gate voltage drain current i dss v ds = 45 v, v gs = 0v 1 ua gate-to-source leakage current i gss v ds = 0 v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.5 1.2 1.5 v v gs = 10v, i d = 2.0a 126 160 v gs = 4.5v, i d = 2.0a 142 180 v gs = 4.0v, i d = 2.0a 147 185 drain-to-source on-resistance b, c r ds(on) v gs = 2.5v, i d = 1.5a 208 250 m ? forward transconductance g fs v ds =10v, i d = 2.0a 3 s capacitances, charges input capacitance c iss 315 output capacitance c oss 18 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 15 pf total gate charge q g(tot) 4.20 threshold gate charge q g(th) 0.51 gate-to-source charge q gs 0.76 gate-to-drain charge q gd v gs = 4.5 v, v ds = 25 v, i d = 2.0a 1.85 nc switching characteristics turn-on delay time td(on) 4.8 rise time tr 3.0 turn-off delay time td(off) 27 fall time tf v gs = 10 v, v ds =25 v, r l =25 ? , r g =6 ? 2.6 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.8a 0.8 1.5 v WNM4006 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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