unisonic technologies co., ltd 5N65K power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-871.a 5 a , 650v n-channel power mosfet ? de scription t he u t c 5N65K is a high voltag e po w e r mosf et designe d to have b e tter ch aracteristics, s u ch as fast s w itc h in g time, lo w g a te charg e , lo w on-state resis t ance an d hi gh rugg ed a v alanc h e characteristics. t h is po w e r m o sf et is usu a ll y used in hi gh sp ee d s w itc h in g app li cations at po w e r suppli e s, pw m motor controls, high efficient dc to dc convert e rs and br idg e circ uits. ? feat ures * r ds (on) = 2 . 4 ? @v gs = 10 v * ultra lo w gat e char ge ( t y p i cal 15 nc ) * lo w r e verse t r ansfer capa citance ( c rs s = t y p i cal 6.5 p f ) * fast s w itchi n g cap abi lit y * improved dv/ d t capa bil i t y , h i gh ru gg edn es s ? sy mbol 1. ga te 3.source 2.drai n to-220f 1 ? or de r i ng i n form at i o n ordering number package pin assignment packing lead free halogen free 1 2 3 5N65Kl-tf3-t 5N65Kg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source 5N65Kl-tf3-t (1)packing type (2)package type (3)lead free (1) t: tube (2) tf3: to- 2 20f (3) g: halogen free, l: lead free http://
5N65K power mosfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 871 .a ? absolute maxi mu m ra ting s (t c = 25c, unless other w i se specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 650 v gate-source voltage v gss 30 v avala n che c u r r ent (note 2) i ar 5 a contin uo us dr ain curr ent i d 5 a pulse d drai n c u rrent (note 2) i dm 20 a ava l an ch e energy singl e puls ed ( note 3) e as 100 mj repetitiv e (not e 2) e ar 10 peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns po w e r diss i pat ion p d 36 w junctio n t e mperature t j + 150 c operatio n t e mperatur e t opr -55 ~ +150 c storage t e mperature t st g -55 ~ +150 c note: 1. 2. 3. 4. a bsolute maximum ratings are those values beyond which the device could be permanently damaged. a bsol ute ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op erat io n is not i m plie d. pulse w i dth lim ited b y t j(ma x) l = 8mh, i as = 5a, v dd = 50v, r g = 25 ? , starting t j = 25c i sd 5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? th er mal dat a parameter symbol ratings unit junctio n to ambient ja 62.5 c/w junctio n to case jc 3.47 c/w
5N65K power mosfet unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 871 .a ? electric al ch ara cteri s tic s (t c = 25c unless oth e r w is e specifi ed) parameter symbol test conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s v gs =0 v, i d = 2 5 0 a 650 v drain-s ource l eaka ge curr en t i ds s v ds = 650v, v gs = 0v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 30v, v ds = 0v 100 na reverse v gs = - 30v, v ds = 0v -100 breakd o w n vo l t age t e mperature co efficient bv dss / t j i d =250 a, referenced to 25 0.6 v/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 2.5a 2.0 2.4 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs = 0 v , f = 1.0mhz 515 670 pf output capacitance c oss 55 72 pf reverse transfer capacitance c rss 6.5 8.5 pf switching characteristics turn-on delay time t d ( on ) v dd = 325v, i d =5 a, r g = 2 5 ? (note 1, 2) 10 30 ns t u rn-on rise t i me t r 42 90 ns turn-off delay time t d ( off ) 38 85 ns turn-off fall time t f 46 100 ns t o tal gate charge q g v ds = 520 v, i d = 5 a , v gs = 10 v (note 1, 2) 15 19 nc gate-source c harg e q gs 2.5 nc gate-drain charge q gd 6.6 nc drain-source diode characteristics and maximum ratings drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 5a 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 5 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 20 a reverse recovery time t r r v gs = 0 v , i s =5a, d if / dt = 100 a/ s (note 1) 300 ns reverse recover y charge q rr 2.2 c note 1. pulse t e st: pulse w i d t h 300 s, dut y c y cle 2% 2. essential l y i nde pen de nt of oper ating temp erature
5N65K power mosfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 871 .a ? test circ uits and wav e for m s same type as d.u.t. l v dd driver v gs r g - v ds d. u. t. + * d v/d t co ntrolle d by r g * i sd con t ro lle d by p u lse peri o d * d.u.t.-d evice und e r te st p. w. period d= v gs (driver) i sd (d .u .t . ) i fm , bod y dio de f o rw ard cu rren t di /d t i rm body d iod e re verse c u rren t body diode recovery dv/dt bod y d i od e fo rward voltag e dro p v dd 10v v ds (d.u.t. ) - + v gs = p.w. period pe a k d i o d e r e c o v e r y d v / d t w a v e f o r m s
5N65K power mosfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 871 .a ? test circ uits and wav e for m s (cont.) s w itchin g test circu i t sw itc h ing w a v e forms g a t e c h a r g e t e s t c i r c u i t g a t e c h a r g e w a v e f o r m d.u.t. r d 10 v v ds l v dd t p v dd t p time bv dss i as i d(t ) v ds ( t ) unc l a m pe d in duc ti v e sw i t c h in g te s t circ uit unc l a m pe d in duc ti v e s w i t c h in g wa v e forms
5N65K power mosfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 50 2- 871 .a ? ty pic al c h ara ct e ris tic s 10 1 10 0 10 1 10 -1 10 0 drain-sou r ce voltage , v ds (v) drain current, i d (a) 10 -1 *notes: 1. 250s pulse test 2. t c =25 v gs top: 5.0v bottorm:4.5v on -region characte r i stics 10 -2 10 0 10 -1 2 gate-sou r c e voltage, v gs (v) dra in current, i d (a) transfer characteristics 46 8 1 0 10 1 *notes: 1. v ds =4 0 v 2. 250s pulse test 25 5v 4.5 v drain-source on-resistance, r ds(on) ( ) drain current, i d (a) 1 0 0 ms utc as s u m e s n o r e s p o n s i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r o d u cts a t v a lu e s th a t ex ce ed, ev e n m om en t ar i l y , r ate d v a l ue s (s uch as m a x i m um rati ngs , ope ra ti ng con di t i o n ra ng es , o r oth er pa ram eters ) l i s ted i n pr odu cts speci f i c a t i on s of a ny and all u t c p r od ucts d es c r i bed o r contai ne d her ei n. ut c p r od ucts a r e n ot de si gn ed f or us e i n l i f e s upp ort a p p l i ances , de v i ce s o r sy st em s w her e m a l f un cti o n o f thes e p r od ucts ca n b e rea son abl y ex pected to re su l t i n per so n a l i n j u r y . r epr od ucti o n i n w hol e o r i n par t is p r oh i b i t e d w i tho u t the p r i o r w r i tte n con sent o f the co pyr i ght ow n e r . t h e i n f o rm ati o n pre sen ted i n th i s do cum e n t d o e s no t f o r m pa rt of an y q uotati o n or con t ra ct, i s b e l i e v e d to b e a ccu rate and re l i a b l e a nd m a y be cha n g ed w i tho u t n o ti ce.
|
