to ? 92 1.collector 2 .emitter 3. base to-92 plastic-encapsulate transistors BF240 transistor (npn) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 4 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =10v, i c =1ma 67 220 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v base-emitter voltage v be v ce =10v, i c =1ma 0.775 v transition frequency f t v ce =10v,i c = 1ma,f=100 mhz 150 mhz symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 4 v i c collector current 25 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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