ds30384 rev. 3 - 2 1 of 3 ddtd (xxxx) c www.diodes.com diodes incorporated ddtd (xxxx) c npn pre-biased 500 ma sot-23 surface mount transistor epitaxial planar die construction complementary pnp types available (ddtb) built-in biasing resistors, r1, r2 available in lead free/rohs compliant version (note 2) features maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c h g d k out 3 2 1 in gnd mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 4, on page 3 marking: date code and marking code (see table below & page 3) ordering information (see page 3) weight: 0.008 grams (approximate) t c u d o r p w e n (2) in r 1 r 2 gnd (1) out (3) p/n r1 (nom) r2 (nom) marking ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc ddtd123tc ddtd143tc ddtd114tc ddtd114gc 1k 2.2k 4.7k 10k 0.22k 1k 2.2k 3.3k 2.2k 4.7k 10k 0 1k 2.2k 4.7k 10k 4.7k 10k 10k 10k open open open 10k n60 n61 n62 n63 n64 n65 n66 n67 n69 n70 n71 n72 characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc v in -10 to +10 -10 to +12 -10 to +30 -10 to +40 -5 to +5 -5 to +10 -5 to +12 -6 to +20 v input voltage, (1) to (2) ddtd123tc ddtd143tc ddtd114tc ddtd114gc v ebo (max) 5v output current all i c 500 ma power dissipation p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.89 1.00 l 0.45 0.61 m 0.085 0.110 0 8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead.
ds30384 rev. 3 - 2 2 of 3 ddtd (xxxx) c www.diodes.com characteristic symbol min typ max unit test condition input voltage ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc v l(off) 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3 v v cc = 5v, i o = 100 a ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc v l(on) 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 10ma v o = 0.3v, i o = 30ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = -50ma/-2.5ma input current ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc i l 7.2 3.8 1.8 0.88 4.5 7.2 3.6 2.4 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain ddtd113ec ddtd123ec ddtd143ec ddtd114ec ddtd122jc ddtd113zc ddtd123yc ddtd133hc g l 33 39 47 56 47 56 56 56 v o = 5v, i o = 50ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only electrical characteristics r1-only, r2-only types @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage ddtd123tc ddtd143tc ddtd114tc ddtd114gc bv ebo 5 v i e = 50 a i e = 50 a i e = 50 a i e = 720 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current ddtd123tc ddtd143tc ddtd114tc ddtd114gc i ebo 300 0.5 0.5 0.5 580 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 50ma, i b = 2.5ma dc current transfer ratio ddtd123tc ddtd143tc ddtd114tc ddtd114gc h fe 100 100 100 56 250 250 250 600 600 600 i c = 5ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only
ds30384 rev. 3 - 2 3 of 3 ddtd (xxxx) c www.diodes.com t c u d o r p w e n xxx = product type marking code, see table on page 1 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september xxx ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free/rohs compliant version part numbers, please add "-f" suffix to the part numbers above. examp le: ddtd114gc-7-f. device packaging shipping ddtd113ec-7 sot-23 3000/tape & reel ddtd123ec-7 sot-23 3000/tape & reel ddtd143ec-7 sot-23 3000/tape & reel ddtd114ec-7 sot-23 3000/tape & reel ddtd122jc-7 sot-23 3000/tape & reel ddtd113zc-7 sot-23 3000/tape & reel ddtd123yc-7 sot-23 3000/tape & reel ddtd133hc-7 sot-23 3000/tape & reel ddtd123tc-7 sot-23 3000/tape & reel ddtd143tc-7 sot-23 3000/tape & reel ddtd114tc-7 sot-23 3000/tape & reel ddtd114gc-7 sot-23 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key
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