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IRLMS1902PBF v dss = 20v r ds(on) = 0.10 ? hexfet ? power mosfet fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the micro6 ? package with its customized leadframe produces a hexfet ? power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23. !" # $ % &'() *++,)!' - "." /"0).1"." 2)",' 3$0' +4 0 56332)++37 888 888 % www.irf.com 1 micro6 ? top view 1 2 d g a d d d s 3 4 5 6 2 www.irf.com ++,)9/"#!' 888 888 : ? ? 9/"#!' 3$ ;;) 888 888 0;) 3 888 888 888 888 * <<!"!' 888 888 : ' (#" )")) 888 888 , 888 888 888 888 *++,)(#"&/' 888 888 *++,)0.&/' 888 888 + + = !* <' 888 = *++,) <' 888 > = *++?@5!!@a <' 888 ,('"> +b!1 3 888 888 0 3 888 888 +b;;!1 3 888 888 0 ? (!! 3 888 888 0 ?, ,(' $ $)) 888 888 b$ $)) 888 888 $( 0. ; $)) 888 888 c 5de,(' !"# : ? 0 ,)++,)b+0) ++,)&/' ,) 5b,(f 137! ?9"1"a <#'< !",) '!. ?9"1"a $+g)"" "(#"!' 888 888 0.0).1 3 888 = 0.0).1 <' 888 "" : $ % " 888 888 888 888 s d g 0$.'h$!#"<!3"71 36g)3$?,;'a i sd "" : !#"< :h"1)1)! i ,;)3"(0+7" ) www.irf.com 3 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.75v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 0.1 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.75v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = 10v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 2.2a 4 www.irf.com ! " # $% & $ & # $ # $ # '( $ 1 10 100 0 100 200 300 400 500 600 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 9 2.2a v = 16v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms www.irf.com 5 ! " )* + ,- %. + - 1 ! 0.1 % 0 0 j / q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f #($0 * #($ 1 & $0 * & $ 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 6 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 2 ;&')&.!.) 0 ? ".")!!"710 ? .31$j ? )!!"711()@@ ? j +.)j" )&1 " ? &#,1")) ? *" ! ? &#&/'")) ;3 2 fig 12. for n-channel hexfet ? power mosfets www.irf.com 7 micro6 (sot23 6l) part marking information micro6 (sot23 6l) package outline dimensions are shown in milimeters (inches) lead assignments recommended footprint dd d d s g 1 2 3 6 5 4 0 -10 o o 0.60 (.023 ) 0.10 (.004 ) 0.20 (.007 ) 0.09 (.004 ) 6x 1.30 (.051 ) 0.90 (.036 ) -c- 0.15 (.006 ) max. 1.45 (.057 ) 0.90 (.036 ) 6 surfaces 0.10 (.004 ) 0.50 (.019 ) 0.35 (.014 ) 6x 2x 0.95 ( .0375 ) 1.75 (.068 ) 1.50 (.060 ) -a- 3.00 (.118 ) 2.80 (.111 ) -b- 3.00 (.118 ) 2.60 (.103 ) 1 2 3 6 5 4 6x 0.65 (.025 ) 2.20 (.087 ) 6x (1.06 (.042 ) 2x 0.95 (.0375 ) notes : 1. dimensioning & tolerancing per ansi y14.5m-1982. 2. controlling dimension : millimeter. 3. dimensions are shown in millimeters (inches). 0.15 (.006 ) m c a s b s e h = irlms 6803 2005 w = (1-26) if pre cede d by las t digit of cale ndar ye ar w = (27-52) if prece de d by a let t er a = irlms 1902 b = irlms 1503 c = irlms 6702 d = irlms 5703 f = irlms 4502 e = irlms6802 g = irlms 2002 part number code reference: part number y = year w = we e k top code lot x 24 0 2010 we e k wor k 04 4 2004 2001 year 2002 2003 01 1 y 2 3 02 03 2007 2005 2006 2009 2008 7 5 6 8 9 d a w b c we e k wor k 25 26 2002 year 2001 2003 2004 28 b y a27 c d 29 30 y z b w a c d (as s hown here) indicates l ead-f ree. note: a line above the work week 51 2008 2006 2007 2009 2010 h f g j k50 52 y x z 8 www.irf.com !"# $% & ' (! #)*(!# &% +,' (! #)* ! - . . !(/!# micro6 tape & reel information dimensions are shown in milimeters (inches) 8mm feed direction 4mm notes : 1. outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. |
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