04.08.2010 rlt1550_100g.doc 1 of 1 RLT1550-100G technical data infrared laser diode structure: gainasp/inp, sqw structure lasing wavelength: typ. 1580 nm, multi mode max. optical power: 100 mw package: 9 mm (sot-148) pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode anode optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit optical output power p o cw - 100 - mw threshold current i th cw 300 400 600 ma operation current i op p o = 100 mw 700 800 1000 ma operation voltage v op p o = 100 mw 2.3 2.4 2.5 v lasing wavelength p p o = 100 mw - 1580 1582 nm spectra halfwidth (fwhm) ? p o = 100 mw 3 4 6 nm beam divergence // p o = 100 mw 8 10 12 beam divergence p o = 100 mw 43 45 47 emitting area wxd - 100x 1 - m x m
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