inc.. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BDY72 description ? contunuous collector current-lc= 3a ? collector power dissipation- : pc= 25w @tc= 25c collector-emitter sustaining voltage- : vceo(sus)= 120v(min) applications ? designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. absolute maximum ratings(ta=25c) symbol vcbo vceo vcex vcer vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage vbe= -1.5v collector-emitter voltage rbe= 100q emitter-base voltage collector current-continuous base current-continuous collector power dissipation@tc=25'c junction temperature storage temperature value 150 120 150 130 7 3 2 25 200 -65-200 unit v v v v v a a w ?c 'c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 7.0 unit ?c/w 3 ^ pin 1.base 2. better 3. collect or (case; to-66 package j_ r l j^t f \ dim a 8 c d e g h k l n q u v -n-1 - -" | ?iu-ds -u? *i rj-h 1^ - 1^ 1 t c j r / \ lk gh l t !j g b 1 sa i1wi1 un 31l40 17 jo 6.70 0.70 1.40 max 31^0 17.70 7.10 0.90 t.60 5,03 2.s4 9.so 14.70 12.40 1.60 24 jo jio 10jo 14.90 12.60 3jso 24^0 3.70 f * nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY72 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vcer(sus) vcex(sus) vce(sat) vee(on) iceo icex iebo hfe fl parameter collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product conditions lc=100ma; ib=0 lc= 100ma; rbe= 100o lc=100ma; vbe=-1.5v lc= 0.5a; ib= 50ma lc= 0.5a; vce= 4v vce= 140v; ib= 0 vce=1 30v; vbe(0ffr 1.5v vce= 130v; vbe(off)= 1-5v tc=150"c ves= tv; lc= 0 lc= 0.5a; vce= 4v lc=0.2a; vce=10v min 120 130 150 60 0.8 max 6.0 1.7 10 1.0 5.0 1.0 180 unit v v v v v ma ma ma mhz
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