WNM3008 single n-channel, 30v, 3.1a, power mosfet descriptions the WNM3008 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WNM3008 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23 pin configuration (top view) w38* w38 = device code * = month marking order information device package shipping WNM3008-3/tr sot-23 3000/reel&tape v ds (v) rds(on) (
) 0.044@ v gs =10v 30 0.057@ v gs =4.5v 1 g 2 s d 3 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 30 gate-source voltage v gs f 20 v t a =25c 3.1 2.8 continuous drain current a t a =70c i d 2.5 2.3 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 2.8 2.6 continuous drain current b t a =70c i d 2.2 2.1 a t a =25c 0.6 0.5 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 125 150 junction-to-ambient thermal resistance a steady state r ja 140 175 t ? 10 s 150 180 junction-to-ambient thermal resistance b steady state r ja 165 210 junction-to-case thermal resistance steady state r jc 60 76 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. WNM3008 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 30 v zero gate voltage drain current i dss v ds = 24v, v gs = 0v 1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.8 1.4 2.0 v v gs =10v, i d = 3.1a 44 62 v gs =4.5v, i d =2.0a 57 77 drain-to-source on-resistance b, c r ds(on) v gs =2.5v, i d =1.0a 180 235 m ? forward tranconductance g fs v ds =4.5v, i d =2.8a 5.0 s capacitances, charges input capacitance c iss 265 output capacitance c oss 38 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 15 v 33 pf total gate charge q g(tot) 7.75 threshold gate charge q g(th) 0.60 gate-to-source charge q gs 0.85 gate-to-drain charge q gd v gs = 10 v, v ds = 15 v, i d = 3.1a 1.80 nc switching characteristics turn-on delay time td(on) 5.1 v gs =10 v, rise time tr 2.9 turn-off delay time td(off) 20.6 v ds = 15 v, r l =15 ? , r g =6 ? 2.7 fall time tf ns body diode characteristics forward voltage v sd v gs = 0 v, i s =1.5a 0.8 1.5 v WNM3008 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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