advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v low on-resistance r ds(on) 5m fast switching characteristic i d 67a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maixmum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice 200910191 1 AP98T06GI-HF halogen-free product parameter rating drain-source voltage 60 pulsed drain current 1 260 gate-source voltage + 20 continuous drain current, v gs @ 10v 67 continuous drain current, v gs @ 10v 42 total power dissipation 41.6 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =40a - 82 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 88 140 nc q gs gate-source charge v ds =48v - 14 - nc q gd gate-drain ("miller") charge v gs =10v - 43 - nc t d(on) turn-on delay time 2 v ds =30v - 17 - ns t r rise time i d =40a - 64 - ns t d(off) turn-off delay time r g =1 , v gs =10v - 35 - ns t f fall time r d =0.75 -18- ns c iss input capacitance v gs =0v - 4165 6660 pf c oss output capacitance v ds =25v - 1000 - pf c rss reverse transfer capacitance f=1.0mhz - 385 - pf r g gate resistance f=1.0mhz - 1.4 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0v - 60 - ns q rr reverse recovery charge di/dt=100a/s - 130 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP98T06GI-HF
a p98t06gi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 300 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 8.0 v 7.0 v 6.0 v v g = 5 .0v 0 40 80 120 160 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10 v 8.0 v 7.0 v 6.0 v v g = 5.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 3 4 5 6 7 8 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap98t06gi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds = 48v i d =40a q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 5000 6000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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