^zmi-l-onauctoi , o ne. 20 stern ave, springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear power transistor BLW98 description n-p-n silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of tv transposers and transmitters in band iv-v, as well as for driver stages in tube systems. features: ? diffused emitter ballasting resistors for an optimum temperature profile; ? gold sandwich metallization ensures excellent reliability. the transistor has a 1/4" capstan envelope with ceramic cap. all leads are isolated from the stud. quick reference data r.f. performance in linear amplifier mode of operation class-a class-a 'vision mhz 860 860 vc6 v 25 25 ic ma 850 850 th c 70 25 dim<1> db -60 -60 p m o sync w > 3,5 typ. 4,4 gp db > 6,5 typ. 7,0 note 1. three-tone test method (vision carrier -8 db, sound carrier -7 db, sideband signal -16 db), zero db corresponds to peak sync level. pin configuration pinning-sot122a. top view fig.1 simplified outline. sot122a. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
uhf linear power transistor BLW98 10 ig (a) 1 10-1 1 (1) seco tt -+- th!= l\0 "c^ 1) x nb = 2 ? 5 - gp7i7 m c ? 1? ? h 1 10 vce(v) nd breakdown limit ( ndependent of temperature) fig.2 d.c. soar. -- 102 thermal resistance (dissipation = 21,25 w; tmb = 82,75 c, th = 70 "c) from junction to mounting base from mounting base to heatsink ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (peak value); vbe = 0 vcesm open base emitter-base voltage (open collector) collector current d.c. lc (peak value); f> 1 mhz icm total power dissipation at th = 70 c ptot storage temperature tstg operating junction temperature t, max. max. max. 50 v 27 v 3,5 v max. 2 a max. 4 a max. 21,5 w -65 to+150 c max. 200 "c 40 ptot (w) 30 20 10 c fig -^ \ x mgp7i8 \ ) 50 th(oc) 100 3 power derating curve vs. temperature. rfhj-mb rth mb-h 5,45 k/w 0,6 k/w
uhf linear power transistor BLW98 rth j-h (k/w) plot (w) fig.4 maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (r^ mb-h = 0,6 k/w.) example nominal class-a operation (without r.f. signal): vce = 25 v; lc = 850 ma; th = 70 c. fig.4 shows: rthj-h max. 6,05 k/w tj max. 200 "c typical device: rthj-h typ. 5,35 k/w tj typ. 183 c
uhf linear power transistor BLW98 package outline studded ceramic package; 4 leads sot122a 10tnm scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit a 597 474 585 ! 0.18 5.58 ! 0.14 7.50 723 d2 6,48 7.24 6.22 i 693 27.56 ! 9,91 25.78 i 9.14 m1 m ! n t m w 3.18 1,66 11 82 1 39 11 04 n1 1,02 3,86 2.92 3.38 2.74 w w 8-32 unc 0381 90
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