1 www.irf.com junction size: square 230 mils wafer size: 4" v rrm class: 600 and 1200 v passivation process: glassivated mesa reference ir packaged part: n. a. phase control thyristors ir230sg..hcb series major ratings and characteristics parameters units test conditions v tm maximum on-state voltage 1.3 v t j = 25c, i t = 25 a v rrm reverse breakdown voltage 600 and 1200 v t j = 25c, i rrm = 100 a (1) i gt max. required dc gate current to trigger 60 ma t j = 25 c, anode supply = 6 v, resistive load v gt max. required dc gate voltage to trigger 1.9 v t j = 25 c, anode supply = 6 v, resistive load i h holding current range 5 to 150 ma anode supply = 6 v, resistive load i l maximum latching current 400 ma anode supply = 6 v, resistive load mechanical characteristics nominal back metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) nominal front metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) chip dimensions 230 x 230 mils (see drawing) wafer diameter 100 mm, with std. < 100 > flat wafer thickness 370 m 10 m maximum width of sawing line 130 m reject ink dot size 0.25 mm diameter minimum ink dot location see drawing recommended storage environment storage in original container, in dessicated nitrogen, with no contamination bulletin i0205j 07/98 (1) nitrogen flow on die edge.
2 www.irf.com ir230sg..hcb series ir 230 s g 12 h cb 1 23 1 - international rectifier device 2 - chip dimension in mils 3 - type of device: s = solderable scr 4 - passivation process: g = glassivated mesa 5 - voltage code: code x 100 = v rrm 6 - metallization: h = silver (anode) - silver (cathode) 7 - cb = probed uncut die (wafer in box) none = probed die in chip carrier 4 device code ordering information table 5 outline t able all dimensions are in millimeters 7 6 bulletin i0205j 07/98 available class 06 = 600 v 12 = 1200 v
3 www.irf.com ir230sg..hcb series top view n 177 basic cells wafer layout bulletin i0205j 07/98 all dimensions are in millimeters
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