2011-08-19 1 smbt2222a/mmbt2222a 1 2 3 npn silicon switching transistor ? low collector-emitter saturation voltage ? complementary type: smbt2907a / mmbt2907a (pnp) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package smbt2222a/mmbt2222a s1p 1 = b 2 = e 3 = c sot23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 75 emitter-base voltage v ebo 6 collector current i c 600 ma total power dissipation- t s 77 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 220 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-08-19 2 smbt2222a/mmbt2222a electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 40 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 75 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 6 - - collector-base cutoff current v cb = 60 v, i e = 0 v cb = 60 v, i e = 0 , t a = 150 c i cbo - - - - 0.01 10 a emitter-base cutoff current v eb = 3 v, i c = 0 i ebo - - 10 na dc current gain 1) i c = 100 a, v ce = 10 v i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 150 ma, v ce = 1 v i c = 150 ma, v ce = 10 v i c = 500 ma, v ce = 10 v h fe 35 50 75 50 100 40 - - - - - - - - - - 300 - - collector-emitter saturation voltage 1) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v cesat - - - - 0.3 1 v base emitter saturation voltage 1) i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v besat 0.6 - - - 1.2 2 1 pulse test: t < 300s; d < 2%
2011-08-19 3 smbt2222a/mmbt2222a electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 20 v, f = 100 mhz f t 300 - - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 2.5 5 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - - 35 short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz h 11e 2 0.25 - - 8 1.25 k ? open-circuit reverse voltage transf. ratio i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz h 12e - - - - 8 4 10 -4 short-circuit forward current transf. ratio i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz h 21e 50 75 - - 300 375 - open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz i c = 10 ma, v ce = 10 v, f = 1 khz h 22e 5 25 - - 35 200 s delay time v cc = 30 v, i c = 150 ma, i b1 = 15 ma, v be(off) = 0.5 v t d - - 10 ns rise time v cc = 30 v, i c = 150 ma, i b1 = 15 ma, v be(off) = 0.5 v t r - - 25 storage time v cc = 30 v, i c = 150 ma, i b1 = i b2 = 15ma t stg - - 225 fall time v cc = 30 v, i c = 150 ma, i b1 = i b2 = 15ma t f - - 60 noise figure i c = 100 a, v ce = 10 v, f = 1 khz, ? f = 200 hz, r s = 1 k ? f - - 4 db
2011-08-19 4 smbt2222a/mmbt2222a test circuit delay and rise time ehn00055 200 osc. 619 30 9.9 0 0.5 ? ? v v v storage and fall time ehn00056 200 osc. 1 30 16.2 0 -13.8 -3.0 500 ~s s ~100 < 5 ns ? ? v v v v k oscillograph: r > 100 ? , c < 12pf, t r < 5ns
2011-08-19 5 smbt2222a/mmbt2222a dc current gain h fe = ? ( i c ) v ce = 10 v ehp00743 smbt 2222/a 10 10 ma h c 10 5 fe 10 3 2 10 1 5 10 10 10 -1 0 1 2 3 -50 ?c 25 ?c 150 ?c saturation voltage i c = ? ( v besat ; v cesat ) h fe = 10 ehp00742 smbt 2222/a 10 0 v be sat ma 10 3 1 10 -1 5 10 0 5 v 0.2 0.4 0.6 0.8 1.0 1.2 ce sat v , 5 10 2 v be v ce c transition frequency f t = ? ( i c ) v ce = 20 v ehp00741 smbt 2222/a 10 10 10 ma f c 10 mhz 10 t 555 0123 10 3 2 10 1 5 2 2 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 5 10 15 v 25 v cb ( v eb 0 5 10 15 20 25 pf 35 c cb ( c eb ) ccb ceb
2011-08-19 6 smbt2222a/mmbt2222a total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 30 60 90 120 150 180 210 240 270 300 mw 360 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00740 smbt 2222/a -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t delay time t d = ? ( i c ) rise time t r = ? ( i c ) ehp00744 smbt 2222/a 10 ns 10 10 ma t c 10 5 10 d 555 0123 10 3 2 10 1 5 r t , h fe t d t d t r t r v cc = 30 v = 10 v be = 5 v = 2 v = 0 v v be v be storage time t stg = ? ( i c ) fall time t f = ? ( i c ) ehp00745 smbt 2222/a 10 10 ma c 5 10 3 2 10 1 5 10 10 12 3 5 5 ns fe h h fe s t f t = 10 = 20 s t t , f h fe = 10
2011-08-19 7 smbt2222a/mmbt2222a package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2011-08-19 8 smbt2222a/mmbt2222a edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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