1/9 DMV1500H ? july 2001 - ed: 6a damper + modulation diode for video symbol parameter value unit modul damper v rrm repetitive peak reverse voltage 600 1500 v i fsm surge non repetitive forward current tp = 10 ms sinusoidal 35 80 a t stg storage temperature range -40to+150 c t j maximum operating junction temperature 150 absolute ratings (limiting values, per diode) insulated to-220ab (bending option f5 available) n full kit in one package n high breakdown voltage capability n very fast recovery diode n specified turn on switching characteristics n low static and peak forward voltage drop for low dissipation n insulated version: insulated voltage = 2500 v rms capacitance = 7 pf n planar technology allowing high quality and best electrical characteristics n outstanding performance of well proven dtv as damper and new faster turbo 2 600v technology as modulation features and benefits high voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with e/w correction. the insulated to-220ab package includes both the damper diode and the modulation diode. assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. description modul damper i f(av) 3a 6a v rrm 600 v 1500 v t rr (max) 50 ns 125 ns v f (max) 1.4 v 1.7 v main product characteristics 1 2 3 damper modulation 123
? DMV1500H 2/9 symbol parameter value unit r th(j-c) damper junction to case 3.6 c/w r th(j-c) modulation junction to case 6 thermal resistances symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f =6a 1.5 2.3 1.25 1.7 v i r ** reverse leakage current v r = 1500v 100 100 1000 m a pulse test : * tp = 380 m s, d <2% **tp = 5 ms, d <2% to evaluate the maximum conduction losses of the damper diode use the following equations : p=1.35xi f(av) + 0.059 x i f 2 (rms) static electrical characteristics of the damper diodes symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f =3a 1.8 1.1 1.4 v i r ** reverse leakage current v r = 600v 20350 m a pulse test : * tp = 380 m s, d <2% ** tp = 5 ms, d <2% to evaluate the maximum conduction losses of the modulation diode use the following equations : p=1.2xi f(av) + 0.066 x i f 2 (rms) static electrical characteristics of the modulation diode symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c 625 ns t rr reverse recovery time i f =1a di f /dt = -50a/ m s v r = 30v tj = 25c 95 125 ns recovery characteristics of the damper diode
? DMV1500H 3/9 symbol parameter test conditions value unit typ. max. t fr forward recovery time i f =6a di f /dt = 80a/ m s v fr =3v tj = 100c 350 ns v fp peak forward voltage i f =6a di f /dt = 80a/ m s tj = 100c 18 25 v turn-on switching characteristics of the damper diode symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c 110 350 ns t rr reverse recovery time i f =1a di f /dt = -50a/ m s v r = 30v tj = 25c 50 ns recovery characteristics of the modulation diode symbol parameter test conditions value unit typ. max. t fr forward recovery time i f =3a di f /dt = 80a/ m s v fr =2v tj = 100c 240 ns v fp peak forward voltage i f =3a di f /dt = 80a/ m s tj = 100c 8v turn-on switching characteristics of the modulation diode
? DMV1500H 4/9 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ip(a) pf(av)(w) fig. 1-1: power dissipation versus peak forward current (triangular waveform, d = 0.45) (damper diode). 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ip(a) pf(av)(w) fig. 1-2: power dissipation versus peak forward current (triangular waveform, d = 0.45) (modula- tion diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 tamb(c) if(av)(a) rth(j-a)=rth(j-c) t d =tp/t tp fig. 2-1: average forward current versus ambient temperature (damper diode). 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 tamb(c) if(av)(a) rth(j-a)=rth(j-c) t d =tp/t tp fig. 2-2: average forward current versus ambient temperature (modulation diode). 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 5.0 10.0 15.0 vfm(v) ifm(a) maximum tj=125c typical tj=125c maximum tj=25c fig. 3-1: forward voltage drop versus forward current (damper diode). 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 vfm(v) ifm(a) typical tj=125c maximum tj=25c maximum tj=125c fig. 3-2: forward voltage drop versus forward current (modulation diode).
? DMV1500H 5/9 1e-3 1e-2 1e-1 1e+0 0.1 0.2 0.5 1.0 tp(s) k=[zth(j-c)/rth(j-c)] d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 35 40 t(s) im(a) tc=100c i m t d =0.5 fig. 5-1: non repetitive surge peak forward current versus overload duration (damper diode). 1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 t(s) im(a) tc=100c i m t d =0.5 fig. 5-2: non repetitive surge peak forward current versus overload duration (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0 200 400 600 800 1000 1200 dif/dt(a/s) qrr(nc) if= 6a 90% confidence tj=125c fig. 6-1: reverse recovery charges versus dif/dt (damper diode). 0.1 1.0 10.0 100.0 0 50 100 150 200 dif/dt(a/s) qrr(nc) if= 3a 90% confidence tj=125c fig. 6-2: reverse recovery charges versus dif/dt (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 dif/dt(a/s) irm(a) if= 6a 90% confidence tj=125c fig. 7-1: reverse recovery current versus dif/dt (damper diode).
? DMV1500H 6/9 1 10 100 200 0 1 2 3 4 5 6 dif/dt(a/s) irm(a) if= 3a 90% confidence tj=125c fig. 7-2: reverse recovery current versus dif/dt (modulation diode). 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 dif/dt(a/s) vfp(v) if= 6a 90% confidence tj=125c fig. 8-1: transient peak forward voltage versus dif/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 10 11 12 dif/dt(a/s) vfp(v) if= 3a 90% confidence tj=125c fig. 8-2: transient peak forward voltage versus dif/dt (modulation diode). 0 20 40 60 80 100 120 140 300 350 400 450 500 550 600 650 700 750 800 dif/dt(a/s) tfr(ns) if= 6a 90% confidence tj=125c vfr=3v fig. 9-1: forward recovery time versus dif/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 200 dif/dt(a/s) tfr(ns) if= 3a 90% confidence tj=125c vfr=2v fig. 9-2: forward recovery time versus dif/dt (modulation diode). vfp irm qrr 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 tj(c) vfp,irm,qrr[tj]/vfp,irm,qrr[tj=125c] fig. 10: dynamic parameters versus junction tem- perature (damper & modulation diodes).
? 7/9 DMV1500H DMV1500H / f5 damper and modula tion diodes forvideo lead bending (option) ordering information 1 10 100 200 1 10 100 vr(v) c(pf) tj=25c f=1mhz modulation fig. 11: junction capacitance versus reverse voltage applied (typical values) (damper & modulation diodes).
? DMV1500H 8/9 package mechanical data to-220ab f5 option ref. dimensions millimeters inches min. max. min. max. a 15.20 15.90 0.598 0.625 a1 24.16 26.90 0.951 1.059 a3 1.65 2.41 0.064 0.094 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 l 2.65 2.95 0.104 0.116 i2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l4 15.80 16.80 0.622 0.661 16.40 typ. 0.645 typ. m1 2.92 3.30 0.114 0.129 r1 1.40 typ. 0.055 typ. r2 1.40 typ. 0.055 typ. c2 b a1 c b2 l2 c2 a3 r2 r1 l3 b1 l4 a f l i e c1 m1 ? n cooling method: by conduction (c) n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n. 2.2mm 2.54mm 1mm 3.1mm printed circuit layout for f5 layout
? DMV1500H 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com type marking package weight base qty delivery mode DMV1500H DMV1500Hf5 DMV1500H to-220ab 2.2 g. 50 tube n epoxy meets ul94, v0 package mechanical data to-220ab m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 n cooling method: by conduction (c) n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n.
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