esd 9ns5v 2 - line s b i d irectional trans ient voltage suppre s sors descriptions the esd 9ns5v is a transient voltage suppre s sors (tvs) which provide a very high level protection for sensitive electronic components that may be su b jected to electrostatic discharge (esd). it is designed to r e- place multilayer varistors (mlv) in consumer equipments applications such as mobile phone, not e- book, pad, stb, lcd tv etc. the ESD9NS5V was past esd transient voltage up to 30k v (contact) according to iec6 1000 - 4 - 2 and wit h- stand peak current up to 9 a for 8/20us pulse a c cording to iec6 1000 - 4 - 5. the ESD9NS5V is available in dfn 1006 - 3l package. standard products are pb - fre e and hal o gen - free . features ? working voltage : 5 v ? peak p ower (tp=8/20us ) : 99 w max. ? peak c urrent (tp=8/20us ) : 9 a max. ? transient protection iec61000 - 4 - 2 , level 4 : 30k v air : 30k v contact ? low clamping voltage ? low leakage current ? small package applications ? cell phone ? pmp ? mid ? pda ? digital camera ? other electronics equipments dfn 1006 - 3l pin c onfigura tion (top view) dfn 1006 - 3l s = device code * = month code (a~z) marking order i nformation device package shipping esd 9ns5v - 3 /tr dfn 1006 - 3l 10 000 /tape&reel s * 1 2 3 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute m aximum r ating s electronics characteristics (ta=25 o c, unless othe r wise noted) 8/20us w aveform iec6 1000 - 4 - 2 waveform parameter symbol rating unit peak pulse power (tp=8/20us) pp k 99 w peak pulse current (tp=8/20us) ipp 9 a esd v oltage iec6 1000 - 4 - 2 air v esd 30 k v esd v oltage iec6 1000 - 4 - 2 contact 30 junction temperature t j 125 o c operating temperature t op - 40~85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v 1 u a rever se breakdown voltage v br i t =1ma 5.8 6.8 8.1 v clamping voltage v c ipp= 1a tp=8/20us 6 v ipp= 9 a tp=8/20us 1 1 v junction capacitance c j f=1mhz, v r =0v 24 30 pf t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification esd 9ns5v
typical c haracteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. p eak pulse current non - repetitive peak pulse power vs. pulse time esd clamping voltage (iec6 1000 - 4 - 2 + 8 k v contact) capacitance vs. reveres voltage power derating vs. temperature esd clamping voltage (iec6 1000 - 4 - 2 - 8 k v contact) 0 1 2 3 4 5 0 10 20 30 40 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 2 4 6 8 10 0 4 8 12 16 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification esd 9ns5v
package outline dimensions dfn1006 - 3 l top view bottom view side view symbol dimensions in millimeter min. typ. max. a >0. 4 0 - 0.40 a1 0.00 - 0.05 a3 0.125 ref d 0.95 1.00 1.05 e 0.55 0.60 0.65 b1 0.10 0.15 0.20 b2 0.20 0.25 0.30 l1 0.20 0.30 0.40 l2 0.40 0.50 0.60 e1 0.35 bsc e2 0.675 bsc recommend pcb layout (unit: mm) note s : this recommended land pattern is for reference pu r- poses onl y. please consult your manufacturing group to ensure your pcb design guidelines are met. 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification esd 9ns5v
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