page . 1 stad-jun.27.2006 pjP75N75 features ? r ds(on) , v gs @10v,i ds @30a=12m ? r ds(on) , v gs @4.5v,i ds @30a=18m ? advanced trench process technology high density cell design for ultra low on-resistance specially designed for converters and power motor controls fully characterized avala nche voltage and current pb free product : 99% sn above can meet rohs environment substance directive request mechanical data case: to-220ab molded plastic terminals : solderable per mil-std-750,method 2026 marking : P75N75 75v n-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) note: 1. maximum dc current limited by the package pan jit reserves the right to improve product design,functions and reliability without notice pin assignment 1. gate 2. drain 3. source gate drain source r e t e m a r a pl o b m y st i m i ls t i n u e g a t l o v e c r u o s - n i a r d v s d 5 7v e g a t l o v e c r u o s - e t a g v s g + 0 2v t n e r r u c n i a r d s u o u n i t n o c i d 5 7a t n e r r u c n i a r d d e s l u p ) 1 i m d 0 5 3a n o i t a p i s s i d r e w o p m u m i x a m t a 5 2 = o c t a 5 7 = o c p d 5 0 1 5 . 2 6 w e g n a r e r u t a r e p m e t e g a r o t s d n a n o i t c n u j g n i t a r e p o t j t , g t s 0 5 1 + o t 5 5 - o c e s l u p e l g n i s h t i w y g r e n e e h c n a l a v a h m 5 . 0 = l , v 5 2 = d d v , a 1 4 = d i e s a 0 2 4j m e c n a t s i s e r l a m r e h t e s a c - o t - n o i t c n u j r c j 2 . 1 o w / c ) d e t n u o m b c p ( e c n a t s i s e r l a m r e h t t n e i b m a o t - n o i t c n u j 2 r a j 2 6 o w / c free datasheet http://
page . 2 stad-jun.27.2006 pjP75N75 electrical characteristics v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u c i t a t s e g a t l o v n w o d k a e r b e c r u o s - n i a r dv b s s d v s g i , v 0 = d a u 0 5 2 =5 7--v e g a t l o v d l o h s e r h t e t a gv ) h t ( s g v s d v = s g i , d a u 0 5 2 =1-3v e c n a t s i s e r e t a t s - n o e c r u o s - n i a r dr ) n o ( s d v s g i , v 5 . 4 = d a 0 3 =-2 . 4 18 1 m e c n a t s i s e r e t a t s - n o e c r u o s - n i a r dr ) n o ( s d v s g i , v 0 1 = d a 0 3 =-5 . 92 1 t n e r r u c n i a r d e g a t l o v e t a g o r e zi s s d v s d v , v 0 6 = s g v 0 =--1a u e g a k a e l y d o b e t a gi s s g v s g =+ v , v 0 2 s d v 0 =--+ 0 0 1a n e c n a t c u d n o c s n a r t d r a w r o fg s f v s d i , v 0 1 = d a 5 1 =0 3--s c i m a n y d e g r a h c e t a g l a t o tq g v s d i , v 0 3 = d v , a 0 3 = s g v 5 =-3 3- c n v s d i , v 0 3 = d a 0 3 = v s g v 0 1 = -5 . 3 6- e g r a h c e c r u o s - e t a gq s g -2 . 9- e g r a h c n i a r d - e t a gq d g -5 1- e m i t y a l e d n o - n r u tt ) n o ( d v d d r , v 0 3 = l 5 1 = i d v , a 2 = n e g v 0 1 = r g 5 . 2 = -5 . 8 10 2 s n e m i t e s i r n o - n r u tt r r -5 . 6 14 1 e m i t y a l e d f f o - n r u tt ) f f o ( d -2 58 6 e m i t l l a f f f o - n r u tt f -1 . 82 1 e c n a t i c a p a c t u p n ic s s i v s d v , v 5 2 = s g v 0 = h m 0 . 1 = f z -0 0 2 3- f p e c n a t i c a p a c t u p t u oc s s o -0 6 2- e c n a t i c a p a c r e f s n a r t e s r e v e rc s s r -0 1 2- e d o i d n i a r d - e c r u o s t n e r r u c d r a w r o f e d o i d . x a mi s ---5 7a e g a t l o v d r a w r o f e d o i dv d s i s v , a 0 3 = s g v 0 =-2 9 . 05 . 1v free datasheet http://
page . 3 stad-jun.27.2006 pjP75N75 fig. 1-typical forward characteristic fig.1- output characteristic typical characteristics curves (t =25 c,unless otherwise noted) a o fig.2- transfer characteristic fig.3- on resistance vs drain current fig.4- on resistance vs gate to source voltage fig.5- on resistance vs junction temperature 0 20 40 60 80 100 012345 v ds - drain-to-source voltage (v) i d - drain-to-source current (a) 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 6.0v 10v 0 20 40 60 80 100 11.522.533.544.55 v gs - gate-to-source voltage (v) i d - drain source current (a) t =125 c j o t =25 c j o t =-55 c j o v =10v ds v =10v ds v =10v ds 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) v =10v i =30a gs d 0 5 10 15 20 25 30 0 20406080100 i d - drain current (a) v =10v gs v =4.5v gs r - on-resistance (m ) ds(on) 0 10 20 30 40 50 246810 v gs - gate-to-source voltage (v) i d =30a t =125 c j o t =25 c j o r - on-resistance (m ) ds(on) free datasheet http://
page . 4 stad-jun.27.2006 pjP75N75 fig.6 - gate charge waveform fig.8 - threshold voltage vs temperature fig.7 - gate charge fig.9 - breakdown voltage vs junction temperature fig.10 - source-drain diode forward voltage qgd qgs qg qsw vgs(th) vgs qg qg(th) 0 2 4 6 8 10 0 10203040506070 q g -gatecharge(nc) v gs - gate-to-source voltage (v) v =30v i =30a ds d 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v th - g-s threshold voltage (normalized) i =250ua d 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - source-to-drain voltage (v) i s - source current (a) t =125 c j o t =25 c j o t =-55 c j o v =0v gs 0.9 0.95 1 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) bv dss - breakdown voltage (normalized) i =250ua d legal statement copyright panjit international, inc 2006 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. free datasheet http://
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