features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. rf mems SAMP7720 dc to 5000mhz, cascadable sige hbt mmic amplifier the SAMP7720 is a high performanc e sige hbt mmic amplifier. a dar- lington configuration featuring one-micron emitters provides high f t and excellent thermal performance. the heterojunction increases breakdown voltage and minimizes leakage current between junctions. cancellation of emitter junction non-linearities result s in higher suppre ssion of intermodu- lation products. only two dc-blockin g capacitors, a bias resistor, and an optional rf choke are required for operation. gain & return loss vs. freq. @t l =+25c 0 6 12 18 24 012345 frequency (ghz) gain (db) -40 -30 -20 -10 0 return loss (db) gain irl orl ? high gain: 16.1db at 1950mhz ? cascadable 50 ? operates from single supply ? low thermal resistance package applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? if amplifier ? wireless data, satellite prelim ds090508 9 rfmd green, rohs compliant, pb-free (z part number) package: sot-363 SAMP7720dc to 5000mhz, cascadable sige hbt mmic ampli- fier parameter specification unit condition min. typ. max. small signal gain 15.8 17.5 19.3 db 850mhz 16.1 db 1950mhz 15.6 db 2400mhz output power at 1db compression 8.2 dbm 850mhz 7.2 dbm 1950mhz output third intercept point 19.4 dbm 850mhz 19.0 dbm 1950mhz bandwidth determined by return loss 5000 mhz >10db input return loss 15.1 db 1950mhz output return loss 25.5 db 1950mhz noise figure 3.2 db 1950mhz device operating voltage 2.4 2.7 3.0 v device operating current 17 20 23 ma thermal resistance 255 c/w junction - lead test conditions: v s =5v, i d =20ma typ., oip 3 tone spacing=1mhz, p out per tone=-5dbm, r bias =120 , t l =25c, z s =z l =50
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