general description product summary v ds @ t j,max 700v i dm 40a r ds(on),max < 0.7 q g,typ 26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum case-to-sink a 65 65 0.5 -- maximum junction-to-ambient a,d 0.6 2.9 aot(b)10t60p aotf10t60p power dissipation b aot(b)10t60p aotf10t60p mj c units junction and storage temperature range maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, and telecom AOB10T60Pl to-263 green 800 aot10t60pl to-220 green tube 1000 orderable part number form minimum order quantity package type maximum junction-to-case v 1000 tube 1000 mj single pulsed avalanche energy g 10 6.6 absolute maximum ratings t a =25c unless otherwise noted v units repetitive avalanche energy c dv/dt aotf10t60pl to-220f green gate-source voltage t c =25c t c =100c continuous drain current tape & reel aotf10t60pl v/ns parameter drain-source voltage aotf10t60p to-220f pb free tube i d a derate above 25c p d w w/c 208 1.7 43 0.3 t c =25c thermal characteristics parameter pulsed drain current c a mosfet dv/dt ruggedness 10* peak diode recovery dv/dt j c 6.6* avalanche current c aotf10t60pl 10* 6.6* 33 480 50 10 40 600 30 50 15 -55 to 150 300 0.26 -- c/w 65 3.8 c/w c/w g d s top view g d s to-220f aotf10t60p g d s to-220 aot10t60p d to-263 d 2 pak d s g AOB10T60P 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
symbol min typ max units 600 700 bv dss / ? tj 0.56 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4.3 5 v r ds(on) 0.58 0.7 g fs 8.8 s v sd 0.74 1 v i s 10 a i sm 40 a c iss 1595 pf c oss 56 pf c o(er) 42 pf c o(tr) 74 pf c rss 11 pf r g 1.7 q g 26 40 nc q gs 8.1 nc q gd 8.2 nc t d(on) 42 ns t r 54 ns t d(off) 52 ns t f 24 ns t rr 497 ns q rr 7.3 m c turn-on rise time turn-on delaytime diode forward voltage dynamic parameters body diode reverse recovery charge body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =10a, r g =25 w i f =10a,di/dt=100a/ m s,v ds =100v v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =40v, i d =5a v gs =10v, i d =5a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c gate-body leakage current v gs =10v, v ds =480v, i d =10a total gate charge gate source charge gate drain charge switching parameters gate resistance f=1mhz static drain-source on-resistance input capacitance m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =30v a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =4a, v dd =150v, r g =25 , starting t j =25c. h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. i sd i d , di/dt 200a/ m s, v dd =400v, t j t j(max) . 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
typical electrical and thermal characteristics 0 0.4 0.8 1.2 1.6 2 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =5a v gs =10v 0 4 8 12 16 20 0 5 10 15 20 25 30 v ds (volts) figure 1: on-region characteristics i d (a) v gs =5.5v 6v 6.5v 10v 7v 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 t j (c) figure 5: break down vs. junction temparature bv dss (normalized) 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 1 10 100 1000 10000 0.1 1 10 100 1000 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =480v i d =10a 0 3 6 9 12 15 0 25 50 75 100 125 150 t case (c) figure 10: current de-rating (note f) current rating i d (a) 0 1.5 3 4.5 6 7.5 0 100 200 300 400 500 600 v ds (volts) figure 9: coss stored energy eoss(uj) e oss 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
typical electrical and thermal characteristics 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for to-220/to-263 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for to-220f pb free (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 13: maximum forward biased safe operating area for to-220f green (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
AOB10T60P typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 14: normalized maximum transient thermal imp edance for to-220/to-263 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.6c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 15: normalized maximum transient thermal imp edance for to-220f pb free (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.9c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal imp edance for to-220f green (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.8c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOB10T60P
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