gaas infrared emitter ope5594a the ope5594s is gaalas infrared emitting diode dimensions (unit : mm) that is designed for high reliability, high radiant intensity and low forward voltage .this device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. this device is packaged t1- 3/4 plastic package and has narrow beam angle with lensed package and cup frame. features ? high-output power ? narrow beam angle ? high reliability and long term stability ? available for pulse operating applications ? optical emitters ? optical switches ? smoke sensors ? ir remote control ? ir sound transmission storage ? condition : 5 c~35 c,r.h.60% ? terms : within 3 months from production date ? remark : once the package is opened, the products should be used within a day. otherwise, it should be keeping in a damp proof box with desiccants. * please take proper steps in order to secure reliability and safety in required conditions and environments for this device. maximum ratings (ta=25 c ) item symbol rating unit power dissipation p d 150 forward current i f 100 pulse forward current 1 i fp 1.0 a reverse voltage v r 5.0 operating temp. topr. -25~ +85 c soldering temp. 2 tsol. 260 . c 1 .duty ratio = 1/100, pulse width=0.1ms. 2 .lead soldering temperature (2 mm from case for 5sec.). electro-opticalcharacteristics (ta=25 c) item symbol conditions min. typ. max. unit forward voltage v f i f =100ma 1.4 1.7 v reverse current i r v r = 5v 10 a capacitance ct f = 1 mhz 20 pf radiant intensity ie i f =100ma 80 mw/ peak emission wavelength p i f = 50ma 940 nm spectral bandwidth 50% i f = 50ma 45 nm half angle i f =100ma 10 deg. 2- 0.5 24.0 min 2.5 2.0 anode cathode 8.7 7.7 1.3 max 5.7 5.0 tolerance : 0.2m m
gaalas infrared emitter ope5594a forward current vs. forward voltage 100 50 30 20 10 5 4 3 2 1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 forward voltage v f (v) ta=25 relative radiant intensity vs. ambient temp. relative radiant intensity vs. emission wavelength. 1.0 0.8 0.6 0.4 0.2 0.0 800 850 900 950 1000 1050 emission wavelen g th ( nm ) ta=25 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 ambient temperature ta( ) i f =50ma angular displacement vs relati v e radia n t i n te ns ity 20 30 40 50 60 70 80 -20 -30 -40 -50 -60 -70 -80 -90 -10 10 0 1.0 0.5 0 0.5 1.0 90 relative radiant intensity ta=25 radiant intensity vs. forward current. forward current vs. ambient temp. 100 80 60 40 20 0 -20 0 20 40 60 80 100 ambient temperature ta( ) ta=25 400 200 100 50 30 10 5 3 1 0.5 0.3 0.1 1 3 5 10 30 5 0 100 2 00 500 forward current if(ma) ta=25
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