spp6308 description applications the spp6308 is the dual p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-363 / sc-70-6l) part marking ? p-channel -20v/1.0a,r ds(on) = 520m ? @v gs =-4.5v -20v/0.8a,r ds(on) = 700m ? @v gs =-2.5v -20v/0.7a,r ds(on) = 950m ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-363 (sc-70-6l) package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPP6308S36RG sot-363 08yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP6308S36RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -20 v gate ?source voltage v gss 12 v t a =25 -1.0 continuous drain current(t j =150 ) t a =80 i d -0.7 a pulsed drain current i dm -3 a continuous source current(diode conduction) i s -0.6 a t a =25 0.35 power dissipation t a =70 p d 0.19 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 360 thermal resistance-junction to ambient steady state r ja 400 /w spp6308 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.35 -0.8 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -5 ua on-state drain current i d(on) v ds -4.5v,v gs =-5v -2 a v gs =-4.5v,i d =-1.0a 0.42 0.52 v gs =-2.5v,i d =-0.8a 0.58 0.70 drain-source on-resistance r ds(on) v gs =-1.8v,i d =-0.5a 0.75 0.95 ? forward transconductance gfs v ds =-10v,i d =-1.0a 1.5 s diode forward voltage v sd i s =-0.5a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 1.5 2.0 gate-source charge q gs 0.3 gate-drain charge q gd v ds = -10v, v gs = -4.5 v i d = -0.88 a 0.2 nc input capacitance c iss 145 output capacitance c oss 25 reverse transfer capacitance c rss v ds =-10v,v gs =0v f=1mhz 10 pf t d(on) 18 30 turn-on time t r 25 40 t d(off) 15 45 turn-off time t f v dd =-10v,r l =20 ? , i d -0.5a v gen =-4.5v ,r g =6 ? 12 20 ns spp6308 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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