tsm1n45 450v n-channel power mosfet 1/9 version: c09 to - 92 sot - 223 general description the tsm1n45 is n-channel enhancement mode power fie ld effect transistors are produced using planar dmo s technology process. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superior switching performance, and withsta nd higher energy pulse in the avalanche and commuta tion mode. there devices are well suited for electronic ballasts base and half bridge configuration. features low gate charge @ typical 6.5nc low crss @ typical 6.5pf avalanche energy specified improved dv/dt capability gate-source voltage 30v guaranteed block diagram ordering information part no. package packing tsm1n45ct b0 to-92 1kpcs / bulk tsm1n45ct a3 to-92 2kpcs / ammo tsm1n45cw rp sot-223 2.5kpcs / 13 reel absolute maximum rating (ta=25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 450 v gate-source voltage v gs 30 v continuous drain current i d 0.5 a pulsed drain current (note 1) i dm 4 a single pulse drain to source avalanche energy (not e 2) e as 108 mj avalanche current (note 1) i a r 0.5 a repetitive avalanche energy (note 1) e a r 0.25 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns total power dissipation @t c =25 o c to-92 p dtot 2 w sot-223 15 operating junction and storage temperature range t j , t stg -55 to +150 o c *surface mounted on 1x1 fr4 board thermal performance parameter symbol limit unit thermal resistance - junction to lead to-92 r ? jl 50 o c/w thermal resistance - junction to case sot-223 r ? jc 8.5 thermal resistance - junction to ambient * to-92 r ? ja 140 o c/w sot-223 60 *when mounted on the minimum pad size recommended ( pcb mount) pin definition : 1. gate 2. drain 3. source n-channel mosfet product summary v ds (v) r ds(on) ( ) i d (a) 450 4.25 @ v gs =10v 0.25
tsm1n45 450v n-channel power mosfet 2/9 version: c09 electrical specifications (ta=25 o c, unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 450 -- -- v drain-source on-state resistance v gs = 10v, i d = 0.25a r ds(on) -- 3.7 4.25 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.3 3.0 3.7 v v ds = v gs , i d = 250ma 3.2 4.0 4.8 zero gate voltage drain current v ds = 450v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 50v, i d = 0.25a g fs -- 0.7 -- s dynamic total gate charge v ds = 360v, i d = 0.5a, v gs = 10v (note 4,5) q g -- 6.5 10 nc gate-source charge q gs -- 1.3 -- gate-drain charge q gd -- 3.2 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 235 -- pf output capacitance c oss -- 29 -- reverse transfer capacitance c rss -- 6.5 -- switching turn-on delay time v gs = 25v, i d = 0.5a, v ds = 225v, r g = 25 (note 4,5) t d(on) -- 14.7 -- ns turn-on rise time t r -- 32.8 -- turn-off delay time t d(off) -- 25.2 -- turn-off fall time t f -- 23.7 -- drain-source diode characteristics and maximum rati ngs maximum continuous drain-source diode forward curre nt i s -- -- 0.5 a maximum pulsed drain-source diode forward current i s m -- -- 4.0 a drain-source diode forward voltage v gs = 0v, i s = 0.5a v sd -- -- 1.4 v reverse recovery time v gs = 0v, i s = 1a di f /dt = 100a/s (note 4) t rr -- 110 -- ns reverse recovery charge q rr -- 0.35 -- c notes: 1. repetitive rating: pulse width limited by maximu m junction temperature 2. l=75mh, i as =1.6a, v dd =50v, r g =25 , starting t j =25oc 3. i sd 0.5a, di/dt 300a/s, v dd bv dss , starting t j =25oc 4. pulse test: pulse width 300us. 5. essentially independent of operating temperature 6. a) reference point of the is the drain r ? jl lead b) when mounted on 3x4.5 fr-4 pcb without any pad copper in a still air environment (r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistance. r ? ca is determined by the users board design)
tsm1n45 450v n-channel power mosfet 3/9 version: c09 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm1n45 450v n-channel power mosfet 4/9 version: c09 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm1n45 450v n-channel power mosfet 5/9 version: c09 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm1n45 450v n-channel power mosfet 6/9 version: c09 diode reverse recovery time test circuit & waveform
tsm1n45 450v n-channel power mosfet 7/9 version: c09 to-92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
tsm1n45 450v n-channel power mosfet 8/9 version: c09 sot-223 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code sot-223 dimension dim millimeters inches min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0.114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 16 10 16 k 1.550 1.800 0.061 0.071
tsm1n45 450v n-channel power mosfet 9/9 version: c09 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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