www.irf.com 1 11/08/05 features: rugged, lightweight near hermetic package with integrated power terminal cap gen iv igbt technology soft recovery rectifiers ultra-low thermal resistance zener gate protection very low conduction and switching loss -55c to +125c operating temperature screening to meet the intent of mil-prf-38534 class h short circuit capability 2.0 ohms series gate resistor high altitude operation, 85,000 feet above sea level at rated voltage hirel tm int-a-pak 2, plastic G300HHCK12P2 half-bridge igbt module the hirel tm int-a-pak series are isolated near hermetic power modules which combine the latest igbt and soft recovery rectifier technology. the module uses both high-speed and low vce(sat) igbt's packaged for ultra low thermal resistance junction to case. the G300HHCK12P2 power module consists of six igbt's and six fred's in a phase- leg or half-bridge configuration. absolute maximum ratings @ tj=25c (unless otherwise specified) parameter symbol value units collector-to-emitter voltage v ces 1200 gate-to-emitter voltage v ge 20 continuous collector current @ tc = 25c 450 continuous collector current @ tc = 100c 300 isolation voltage v isol 2500 v rms a v i c product summary part number v ce i c v ce(sat) G300HHCK12P2 1200v 300a 2.2 pd-97014a hirel tm int-a-pak 2
2 www.irf.com G300HHCK12P2 electrical characteristics @ tj = 25c (unless otherwise specified) parameter symbol test conditions min. typ. max. units off characteristics collector emitter breakdown voltage v ces v ge = 0v 1200 - - v zero gate voltage collector current i ces v ge =0v, v ce = 1200v --1.0ma gate emitter leakage current i ges v ge = 15v, v ce = 0v --10 a on characteristics gate threshold voltage v ge(th) v ce = v ge , i c = 1.0ma 3.5 - 7.5 collector emitter saturation voltage v ce(sat) v ge = 15v, i c = 300a -2.22.7 dynamic characteristics total gate charge qg v ce = 600v, i c = 300a, v ge = 15v -2300- nc input capacitance c ies -44- output capacitance c oes v ge = 0v, v ce = 25v, f = 1.0mhz -3.0- nf reverse transfer capacitance c res -0.3- switching inductive load characteristics turn-on delay time td(on) - 830 1000 rise time tr 300 400 turn-on losses e on v cc = 600v, i c = 300a, v ge =15v -100- mj turn-off delay time td(off) r g(on) = 20 ? , r g(off) =10 ? , l=100 p h 1900 2200 fall time tf - 300 400 turn-off losses e off -55- mj diode characteristics forward voltage v f i f = 300a -1.92.2 v reverse recovery charge qrr - 15 20 s -90- a reverse recovery time trr - 500 800 ns ns ns v
www.irf.com 3 G300HHCK12P2 thermal-mechanical specifications parameter symbol min max units igbt thermal resistance, junction to case, per switch - 0.06 diode thermal resistance, junction to case, per switch - 0.10 operating junction temperature range t j -55 150 storage temperature range t stg -55 125 screw torque - mounting screw torque - terminals module weight -270g c r thjc t26in-lbs - c/w module screening test or inspection comments method condition internal visual 2017 temperature cycle 1010 b 10 cycles, -55c to +125c mechanical shock 2002 b 1500g, 0.5ms, 5 times (y1 direction only) burn-in 1015 a 160 hrs @ +125c final electrical test group a, -55c, +25c, +125c external visual 2009 mil-std-883 electrical characteristics @ tj = 125c (unless otherwise specified) parameter symbol test conditions min. typ. max. units off characteristics collector emitter breakdown voltage v ces v ge = 0v 1200 - - v zero gate voltage collector current i ces v ge =0v, v ce = 1200v --3.0ma gate emitter leakage current i ges v ge = 15v, v ce = 0v --10 a on characteristics gate threshold voltage v ge(th) v ce = v ge , i c = 1.0ma 3.5 - 7.5 collector emitter saturation voltage v ce(sat) v ge = 15v, i c = 300a -2.22.7 diode characteristics forward voltage v f i f = 300a -1.92.2 v v
4 www.irf.com G300HHCK12P2 schematic fig 1: maximum collector current vs case temperature t c , case temperature (c)
0 100 200 300 400 500 25 50 75 100 125 15 0 maximum dc collector current (a
www.irf.com 5 G300HHCK12P2 t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic d t 90% vge + vge eoff = fig. 3 - test waveforms for circuit of fig. 2, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vc c trr qrr = trr tx id dt fig. 2 - test circuit for measurement of e on , e off , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 3 - test waveforms for circuit of fig. 2, defining e on , t d(on) , t r fig. 4 - test waveforms for circuit of fig. 2, defining e rec , t rr , q rr , i rr
6 www.irf.com G300HHCK12P2 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir leominster: 205 crawford st., leominster, massachusetts 01453, tel: (978) 534-5776 data and specifications subject to change without notice. 11/05 part numbering nomenclature notes: 1) all dimensions are in inches 2) unless otherwise specified, tolerances .xx = 0 .01, .xxx = 0.005 case outline and dimensions - hirel tm int-a-pak 2 g 300 hh c k 12 p2 h igbt module - hirel c urrent capability 3 00 = 300 amps g eneration i gbt / fwd configuration c = gen 5 (npt) / gen 3 screening level p = unscreened, 25c electrical te st ( not intended for qualification) h = screened per mil-prf-38534 voltage 12 = 1200v c ircuit configuration h h = half bridge igbt speed / sc capability k = fast, sc capable package type p2 = hirel tm int-a-pak 2, 2.5" x 4.0" x 1.0"
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