GT40J322 2013-11-01 1 toshiba insulated gate bipolar tr ansistor silicon n channel igbt GT40J322 current resonance inverter switching application ? frd included between emitter and collector ? enhancement mode type ? high-speed igbt: t f = 0.20 s (typ.) (i c = 40 a) ? low saturation voltage: v ce (sat) = 1.7 v (typ.) (i c = 40 a) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 25 v dc i c 40 collector current 1ms i cp 100 a dc i f 30 diode forward current 1ms i fp 60 a collector power dissipation (tc = 25c) p c 120 w junction temperature t j 150 c storage temperature t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chang e in temperature, etc.) may cause this product to decrease in the reliability significantly ev en if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the abs olute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. re liability test report and esti mated failure rate, etc). equivalent circuit marking unit: mm jedec ? jeita ? toshiba 2-16c1c weight: 4.6 g (typ.) emitter collector gate lot no. note 1 40j322 toshiba part no. (or abbreviation code) start of commercial production 2007-12
GT40J322 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 ? ? 500 na collector cut-off current i ces v ce = 600 v, v ge = 0 ? ? 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 40 ma, v ce = 5 v 3.0 ? 6.0 v collector-emitter saturation voltage v ce (sat) i c = 40 a, v ge = 15 v ? 1.7 2.7 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 2500 ? pf rise time t r ? 0.20 ? turn-on time t on ? 0.30 ? fall time t f ? 0.20 0.40 switching time turn-off time t off resistive load v cc = 300 v, i c = 40 a v gg = 15 v, r g = 39 (note 2) ? 0.50 ? s diode forward voltage v f i f = 30 a, v ge = 0 ? 1.4 2.0 v reverse recovery time t rr i f = 30 a, v ge = 0, di/dt = ? 100 a/ s ? ? 0.2 s thermal resistance (igbt) rth(j-c) ? ? ? 1.04 c/w thermal resistance (diode) rth(j-c) ? ? ? 2.0 c/w note 1: a line under a lot no. identifies the indication of product labels [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales r epresentative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/eu of the european parliament and of the council of 8 june 2011 on the restriction of the use of cert ain hazardous substances in electrical and electronic equipment. note 2: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t off t r t on 0 0 t f 10% 10% 90% 90% r g v cc 10 0 7.5
GT40J322 2013-11-01 3 common emitter tc = 25c common emitter tc = -40c common emitter tc = 25c common emitter tc = 125c common emitter v ce = 5 v common emitter v ge = 15 v collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) v ce ? v ge gate-emitter voltage v ge (v) gate-emitter voltage v ge (v) gate-emitter voltage v ge (v) gate-emitter voltage v ge (v) v ce ? v ge v ce ? v ge i c ? v ge collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector-emitter saturation voltage v ce (sat) (v) case temperature tc (c) v ce (sat) ? tc
GT40J322 2013-11-01 4 v ce, v ge ? q g 500 0 0 80 160 240 400 100 200 300 0 4 12 16 20 v ce = 300 v ??? r l = 7.5 tc = 25c 200 100 320 400 8 common emitter r l = 7.5 tc =2 5 collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) gate charge q g (nc) common emitter v ge = 0 v f = 1 mhz tc =2 5 collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) 1000 0.1 1 10 1000 10000 10 100 1 100 10 s* 10 ms * 1 ms * dc operation i c max (continuous) i c max (pulsed) * 100 s* * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. collector current i c (a) collector-emitter voltage v ce (v) safe operating area 1000 0.1 1 10 1000 10000 10 100 1 100 t j < = 125c v gg = 20 v r g = 39 tj 125 v gg = 20 v r g = 39 collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa 10 0.01 0 20 50 60 0.1 1 30 40 ??? v cc = 300 v r g = 39 v gg = 15 v tc = 25c t f t r t on t off 10 common emitter v cc = 300 v r g = 39 v gg = 15 v tc =2 5 switching time ( s) switching time ? i c collector current i c (a) 10 0.01 1 10 100 1000 0.1 1 ??? v cc = 300 v i c = 40 a v gg = 15 v tc = 25c t off t on t r t f common emitter v cc = 300 v i c = 40 a v gg = 15 v tc =2 5 switching time ( s) switching time ? r g gate resistance r g ( )
GT40J322 2013-11-01 5 ?? t w (s) r th (t) ? t w ^?? r th (t) (c/w) 10 ? 2 10 ? 5 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 1 10 0 10 1 10 2 10 ? 4 10 ? 3 tc = 25c diode stage igbt stage common emitter i f = 30 a tc = 25c common emitter v ge =0 v common emitter di/dt=-100 a/ s v ge = 0 v tc = 25c pulse width t w (s) r th (j ? c ) ? t w transient thermal impedance (junction - case) r th(j? c) (c/w) peak reverse recovery current i rr (a) reverse recovery time t rr ( s) i rr , t rr ? i f forward voltage v f (v) i f ? v f forward current i f (a) reverse recovery time t rr ( s) i rr , t rr ? di/dt di/dt (a/ s) peak reverse recovery current i rr (a) reverse voltage v r (v) c j ? v r junction capacitance cj (pf) forward current i f (a) 300 100
GT40J322 2013-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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