amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC693 v03.1108 general description features functional diagram the hm c693 is a two stage gaas phem t mmi c 1 w att p ower amplifer which operates between 27 and 34 g h z. the hm c693 provides 17.5 db of gain, and +30 dbm of saturated output power at 23% p a e from a +5v supply. the rf i / o s are dc blocked and matched to 50 o hms for ease of integration into m ulti-chip- m odules ( m c m s). all data is taken with the chip in a 50 o hm test fxture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). s aturated o utput p ower: +30 dbm @ 23% p a e o utput ip 3: +37 dbm gain: 17.5 db dc s upply: +5v @ 800ma 50 o hm m atched i nput/ o utput die s ize: 2.53 x 2.43 x 0.1 mm electrical specifcations, t a = +25 c, vdd = vdd1-3t = vdd1-3b = +5v, idd = 800ma, vgg = vgg1-3t = vgg1-3b [1] typical applications the hm c693 is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? v s at ? m ilitary & s pace p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 27 - 29.5 29.5 - 31.4 31.4 - 34 g h z gain 16 18.5 15 17.5 14 16.5 db gain variation o ver temperature 0.023 0.014 0.016 db/ c i nput r eturn l oss 17 17 14 db o utput r eturn l oss 34 24 19 db o utput p ower for 1 db compression ( p 1db) 27 30 27 30 27 29 dbm s aturated o utput p ower ( p sat) 30.8 31 29.6 dbm o utput third o rder i ntercept ( ip 3) [2] 38 38 37 dbm total s upply current ( i dd) 800 1100 800 1100 800 1100 ma [1] adjust vgg between -2 to 0v to achieve i dd= 800ma typical. [2] m easurement taken at 5v @ 800ma, p in / tone = +10 dbm gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. frequency over temperature output return loss vs. frequency over temperature broadband gain & return loss vs. frequency gain vs. frequency over temperature p1db vs. frequency over temperature psat vs. frequency over temperature HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz -40 -30 -20 -10 0 10 20 30 22 24 26 28 30 32 34 36 38 s21 s11 s22 response (db) frequency (ghz) -20 -10 0 10 20 30 22 24 26 28 30 32 34 36 38 +25 c +85 c -55 c response (db) frequency (ghz) -25 -20 -15 -10 -5 0 26 27 28 29 30 31 32 33 34 35 +25 c +85 c -55 c return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 26 27 28 29 30 31 32 33 34 35 +25 c +85 c -55 c return loss (db) frequency (ghz) 23 25 27 29 31 33 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c p1db (dbm) frequency (ghz) 23 25 27 29 31 33 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c psat (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com power compression @ 30 ghz, 5v @ 800ma output ip3 vs. temperature 5v @ 800ma, pin/tone = +10 dbm output im3, 5v @ 700ma output im3, 5v @ 800ma psat vs. frequency over current p1db vs. frequency over current HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz 23 25 27 29 31 33 26 27 28 29 30 31 32 33 34 500ma 600ma 800ma 1000ma 1100ma p1db (dbm) frequency (ghz) 23 25 27 29 31 33 26 27 28 29 30 31 32 500ma 600ma 800ma 1000ma 1100ma psat (dbm) frequency (ghz) 0 5 10 15 20 25 30 35 -10 -6 -2 2 6 10 14 18 pout dbm gain db pae % pout(dbm), gain(db), pae(%) input power (dbm) 24 28 32 36 40 44 26 27 28 29 30 31 32 33 34 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) 0 15 30 45 60 75 7 10 13 16 19 22 25 28 27 ghz 29 ghz 33 ghz 34 ghz im3 (dbc) output power per tone (dbm) 0 15 30 45 60 75 7 10 13 16 19 22 25 28 27 ghz 29 ghz 33 ghz 34 ghz im3 (dbc) output power per tone(dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com reverse isolation vs. frequency over temperature, 5v @ 800ma power dissipation, 5v @ 800ma gain & power vs. supply voltage @ 30 ghz gain & power vs. supply current @ 30 ghz HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz absolute maximum ratings rf i nput p ower ( rfin )(vdd = 5 vdc) +20 dbm channel temperature 175 c continuous p diss (t= 85 c) (derate 76.9 m w /c above 85 c) 6.9 w thermal r esistance (channel to die bottom) 13 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +4.5 785 +5.0 800 +5.5 790 typical supply current vs. vdd note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 800ma at +5v ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions -80 -70 -60 -50 -40 -30 -20 -10 0 26 27 28 29 30 31 32 33 34 35 +25 c +85 c -55 c isolation (db) frequency (ghz) 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 0 2 4 6 8 10 12 14 16 18 27 ghz 28 ghz 30 ghz 32 ghz 34 ghz power dissipation (w) input power (dbm) 0 5 10 15 20 25 30 35 500 600 700 800 900 1000 1100 gain p1db psat gain (db), p1db (d bm), psat (dbm) idd supply current (ma) 0 5 10 15 20 25 30 35 4.5 5 5.5 gain p1db psat gain (db), p1db (d bm), psat (dbm) vdd (v)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad descriptions p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hm. 2, 4, 6, 10, 12, 14 vgg1t, vgg2t vgg3t, vgg3b vgg2b, vgg1b gate control for amplifer. adjust to achieve recommended bias current. p lease follow mmi c amplifer biasing p rocedure application n ote. e xternal bypass capacitors of 100p f and 0.1u f are required 3, 5, 7, 9, 11, 13 vdd1t, vdd2t vdd3t, vdd3b vdd2b, vdd1b p ower s upply voltage for amplifer. e xternal bypass capacitors of 100p f and 0.1u f are required. 8 rfo ut this pad is ac coupled and matched to 50 o hm. die bottom g n d die bottom must be connected to r d/dc ground. HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC693 v03.1108 gaas phemt mmic 1 watt power amplifier, 27 - 34 ghz
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