o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. maximum ratings MFE209 n-channel dual-gate silicon-nitride passivated mos field-effect transistor telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 rating drain-source voltage drain. gate voltage gate current drain current ? continuoui total power dissipation fe ta = 26'c derate above 25c storage channel temperature range operating channel temperature lead temperature, 1/16* from seated surface for 10 seconds symbol vdsx vdgi vdg2 igir igif iq2r 'g2f id pd tsib tchannel tl value 20 30 30 -10 10 10 30 300 1.71 -65to +200 200 260 unit vdc vdc madc madc mw mw-'c c c "c to-72 electrical characteristics gate 1 ? source reverse breakdown voltage hgi - -10 madc, vq2s ? vds ? o) gate 2 -~ source forward breakdown voltage (|q2 f' 10 madc, vqis " vds - 0) gate 2 ? source reverie breakdown voltage (|q2 - -10 madc, vqis - vds ? 0) gate 1 ? source cutoff voltage (vds ? "> vdc, vq2s * *- vdc, id " 50 nadc) gate 2 ? source cutoff voltage (vds ? 15 vdc, vqis ? o, i0 - so ^adc) gate 1 ? terminal forward current (vqjs .. 6.0 vdc, vg2s - vds =? 01 gate 1 ? terminal reverse current (vgis - '-16.0 vdc, vq2s f vds ? o) (vgis - -fl.o-vdc, yeas ? vds - o, ta - iwo gate 2 ? terminal forward current (vg2s'- 6.0 vdc, vgis - vds - 01 gate 2 ? terminal reverse current (vq2s ?? -6.0 vdc, vgis - vds - 01 (vg2s = -6.0 vdc, vgis ? vds * o. ta ? iso-ci v(br)dsx vibrigissf vibrigissr v(brig2ssf v(br)g2ssr vgis(off) vg2s(oh) 'g1ssf 'g1ssr 'g2ssf iq2ssr 20 7,0 -7.0 7.0 -7.0 0 1 ?0.1 -- - ? - ? ? ? _ ? - ? - - i- n ? 22 22 22 "yo 'n 1 0 20 -20 -10 20 ??20 -10 vdc vdc vdc vdc vdc i vdc nadc nadc madc nadc nadc madc typ on characteristics gate 1 ? zero voltage drain current (vds ? is vdc, v(jis - 0, vq2s ? *-0 voo) idss 5.0 ? 30 madc small-signal characteristics forward transfer admit' wds 1& vdc, v^2s input capacitance (vos ? i&v*- '^lkj.. reverse transfer cao<*c' ivds -5 vdc v,,^, output capacirance (vds = 15 vdc, vg2s common-source noise (vds = isvdc, vg2s common-source power (vds = iavdc, vg2s bandwidth (vds - ^ vdc, vq2s iiru.r 4 o vdc, id jo vrtr. id j u vdc. id - 4 o vdc. id ~ igure (ftqufe 1 1 ' 4 o vdc. id ??= ga?> (figure 11) 40 vdc, id ' 10 madc. f - ?iomartc > 5 0 madc f 5.0 madc. f 10 madc, f - 10 madc, f * 10 madc. f = 10 khz) 1.0 mhz) 1.0 mhz) 1,0mhz) 500 mhz) 500mhz) 500mhz) ivfs r c,sb c,ss coss nf gps bw ,0 ? 0,005 05 ? 10 7.0 ,3 ?s 0023 20 45 t 13 ? 1 1 > h i 0 03 i pf 0 0 0 7 pf db db mhz ^j i: milmk and notes assocmeo with toh atjbk quality semi-condoctors
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