? semiconductor components industries, llc, 2012 june, 2012 ? rev. 2 1 publication order number: ntmfs5830nl/d ntmfs5830nl power mosfet 40 v, 172 a, 2.3 m features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 40 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 28 a t a = 70 c 22 power dissipation r ja (note 1) t a = 25 c p d 3.2 w t a = 70 c 2.0 continuous drain current r jc (note 1) t c = 25 c i d 172 a t c = 70 c 138 power dissipation r jc (note 1) t c = 25 c p d 125 w t c = 70 c 80 pulsed drain current t p = 10 s i dm 690 a operating junction and storage temperature t j , t stg ? 55 to +150 c source current (body diode) i s 172 a single pulse drain ? to ? source avalanche energy (t j = 25 c, v dd = 50 v, v gs = 10 v, i l = 85 a pk , l = 0.1 mh, r g = 25 eas 361 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance maximum ratings parameter symbol value unit junction ? to ? case (drain) (note 1) r jc 1.0 c/w junction ? to ? ambient steady state (note 1) r ja 39 junction ? to ? ambient steady state (note 2) r ja 73 1. surface ? mounted on fr4 board using 1 sq ? in pad (cu area = 1.127 in sq [2 oz] inclusing traces). 2. surface ? mounted on fr4 board using 0.155 in sq (100mm 2 ) pad size. dfn5 (so ? 8fl) case 488aa style 1 marking diagram http://onsemi.com a = assembly location y = year w = work week zz = lot traceability 1 v (br)dss r ds(on) max i d max 40 v 2.3 m @ 10 v 172 a 3.6 m @ 4.5 v g (4) s (1,2,3) n ? channel mosfet d (5) device package shipping ? ordering information NTMFS5830NLT1G dfn5 (pb ? free) 1500/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 5830nl aywzz s s s g d d d d
ntmfs5830nl http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j 32 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 1 a t j = 125 c 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 3.0 v negative threshold temperature coefficient v gs(th) /t j 7.2 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v i d = 20 a 1.7 2.3 m v gs = 4.5 v i d = 20 a 2.6 3.6 forward transconductance g fs v ds = 5 v, i d = 10 a 38 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v 5880 pf output capacitance c oss 750 reverse transfer capacitance c rss 500 total gate charge q g(tot) v gs = 10 v, v ds = 32 v; i d = 60 a 113 nc threshold gate charge q g(th) v gs = 4.5 v, v ds = 32 v; i d = 60 a 5.5 gate ? to ? source charge q gs 19.5 gate ? to ? drain charge q gd 32 plateau voltage v gp 3.6 v gate resistance r g 0.5 switching characteristics (note 4) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 20 v, i d = 10 a, r g = 2.5 22 ns rise time t r 32 turn ? off delay time t d(off) 40 fall time t f 27 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.74 1.0 v t j = 125 c 0.58 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 60 a 41 ns charge time t a 19 discharge time t b 19 reverse recovery charge q rr 33 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntmfs5830nl http://onsemi.com 3 typical characteristics 012345 figure 1. on ? region characteristics v ds , drain ? to ? source voltage (v) i d , drain current (a) 10 v 4.0 v 5.5 v 4.2 v t j = 25 c v gs = 3.2 v 3.8 v 0 50 100 200 150 0 50 100 200 150 2345 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c figure 2. transfer characteristics v gs , gate ? to ? source voltage (v) i d , drain current (a) 0.000 0.002 0.004 0.006 0.010 246810 figure 3. on ? resistance vs. gate ? to ? source voltage v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) i d = 20 a t j = 25 c 0.0010 0.0020 0.0030 0 25 50 75 100 figure 4. on ? resistance vs. drain current and gate voltage i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) v gs = 4.5 v t j = 25 c v gs = 10 v 0.6 0.8 1.0 1.2 1.4 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v i d = 20 a 10000 100000 10 20 30 40 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (v) i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v 0.0015 0.0025 0.0035 0 125 150 175 1.8 1000 250 350 300 4.4 v 3.6 v 3.4 v 250 350 300 0.008
ntmfs5830nl http://onsemi.com 4 typical characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 010203040 figure 7. capacitance variation v ds , drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 0 2 4 6 8 10 010203040 60 figure 8. gate ? to ? source voltage vs. total charge q g , total gate charge (nc) v gs , gate ? to ? source voltage (v) v ds = 32 a i d = 60 a t j = 25 c q t q gs q gd 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = 20 v i d = 10 a v gs = 4.5 v t d(off) t d(on) t f t r 0 25 50 75 125 0.60 0.65 0.70 0.80 0.90 figure 10. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) v gs = 0 v t j = 25 c 0.1 1 10 1000 0.01 0.1 1 10 100 figure 11. maximum rated forward biased safe operating area v ds , drain ? to ? source voltage (v) i d , drain current (a) v gs = 10 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 1 ms dc 10 ms 100 100 50 70 80 90 100 120 110 0.95 0.85 0.75 150 175 10 s
ntmfs5830nl http://onsemi.com 5 typical characteristics 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 12. thermal response pulse time (sec) r ja(t) ( c/w) effective transient thermal resistance 0.1 duty cycle = 0.5 0.2 0.05 0.02 0.01 single pulse
ntmfs5830nl http://onsemi.com 6 package dimensions m 3.00 3.40 0 ??? 3.80 12 dfn5 5x6, 1.27p (so ? 8fl) case 488aa issue g notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 bsc d1 4.50 4.90 d2 3.50 ??? e 6.15 bsc e1 5.50 5.80 e2 3.45 ??? e 1.27 bsc g 0.51 0.61 k 1.20 1.35 l 0.51 0.61 l1 0.05 0.17 a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 3 x c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.22 6.10 4.30 0.71 1.50 0.71 0.20 style 1: pin 1. source 2. source 3. source 4. gate 5. drain m *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 0.475 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 3x 4x 4x pin 5 (exposed pad) on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntmfs5830nl/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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