ty semiconductor reliability handbook (?handling SSM3K301T power management switch applications high-speed switching applications ? 1.8 v drive ? low on-resistance: r on = 110 m ? (max) (@v gs = 1.8 v) r on = 74 m ? (max) (@v gs = 2.5 v) r on = 56 m ? (max) (@v gs = 4.0 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 12 v dc i d 3.5 drain current pulse i dp 7.0 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = 1 ma, v gs = 0 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ? 12 v 12 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 12 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 2.0 a (note 2) 6 10 ? s i d = 2.0 a, v gs = 4.0 v (note 2) ? 44 56 i d = 1.0 a, v gs = 2.5 v (note 2) ? 53 74 drain-source on-resistance r ds (on) i d = 0.5 a, v gs = 1.8 v (note 2) ? 70 110 m input capacitance c iss ? 320 ? output capacitance c oss ? 62 ? reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 51 ? pf total gate charge q g ? 4.8 ? gate-source charge q gs ? 3.3 ? gate-drain charge q gd v ds = 10 v, i ds = 3.5 a v gs = 4 v ? 1.5 ? nc turn-on time t on ? 18 ? switching time turn-off time t off v dd = 10 v, i d = 2 a, v gs = 0~2.5 v, r g = 4.7 ? 14 ? ns drain-source forward voltage v dsf i d = ? 3.5 a, v gs = 0 v (note 2) ? ? 0.85 ? 1.2 v note 2: pulse test unit: mm weight: 10 mg (typ.) unit: mm product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th, and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = 10 v r g = 4.7 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5 v 0 v 10% 90% t off t r v dd v ds ( on ) 1 2 3 kk4 1 2 3 SSM3K301T product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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