elektronische bauelemente SSPS7630N 9.4 a, 30 v, r ds(on) 19 m ? dual-n channel mode power mosfet 28-jun-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sop-8 saves board space. fast switching speed. high performance trench technology. package information package mpq leader size dfn3*3-8pp 3k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a = 25c 9.4 a continuous drain current 1 t a = 70c i d 6.8 a pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 2.1 a t a = 25c 2.5 w total power dissipation 1 t a = 70c p d 1.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec r jc 83 c / w thermal resistance junction-ambient (max.) 1 steady state r ja 120 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. dfn3*3-8pp d d s s g g d d m illimeter millimeter ref. min. max. ref. min. max. a 3.0 bsc. g 0.7 0.9 b 3.2 bsc. h 1.1 bsc. c 0.2 0.35 i 2.475 bsc d 0.65 bsc. j 1.8 bsc. e 0.1 0.25 k 0.3 0.5 f 3.0 bsc l 0.52 bsc
elektronische bauelemente SSPS7630N 9.4 a, 30 v, r ds(on) 19 m ? dual-n channel mode power mosfet 28-jun-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) 1 - - v v ds = v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds =0, v gs = 20v - - 1 a v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v, v gs =0, t j = 55c on-state drain current 1 i d(on) 15 - - a v ds = 5v, v gs = 10v - - 19 v gs = 10v, i d = 7a drain-source on-resistance 1 r ds(on) - - 28 m v gs = 4.5v, i d =5.6a forward transconductance 1 g fs - 17 - s v ds = 15v, i d =7a diode forward voltage v sd - 0.71 - v i s =1a, v gs =0 dynamic 2 total gate charge q g - 5.2 - gate-source charge q gs - 1.7 - gate-drain charge q gd - 2 - nc i d = 7a v ds = 15v v gs = 4.5v input capacitance c iss - 528 - output capacitance c oss - 110 - reverse transfer capacitance c rss - 72 - pf v gs =0 v ds =15v f =1.0mhz turn-on delay time t d(on) - 2 - rise time t r - 5 - turn-off delay time t d(off) - 20 - fall time t f - 6 - ns v ds = 15v i d = 7a v gen = 10v r l = 2.1 r gen = 6 notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSPS7630N 9.4 a, 30 v, r ds(on) 19 m ? dual-n channel mode power mosfet 28-jun-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSPS7630N 9.4 a, 30 v, r ds(on) 19 m ? dual-n channel mode power mosfet 28-jun-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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