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| Datasheet File OCR Text: |
| geometry principal device type ctlsh01-30 gross die per 5 inch wafer 251,364 process CPD106R schottky diode schottky diode chip process details die size 8.3 x 8.3 mils die thickness 3.9 mils anode bonding pad area 5.4 x 5.4 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (20-april 2011)
process CPD106R typical electrical characteristics www.centralsemi.com r0 (20-april 2011) |
Price & Availability of CPD106R
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