advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 15m fast switching characteristic i d 65a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.9 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 20080605 3 thermal data parameter storage temperature range total power dissipation 138 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.11 continuous drain current, v gs @ 10v 41 pulsed drain current 1 260 gate-source voltage 20 continuous drain current, v gs @ 10v 65 parameter rating drain-source voltage 100 1 AP75T10GS/p rohs-compliant product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap75t10gp) are available for low-profile applications. g d s to-263(s) g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 100 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.09 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 15 m ? ? ?
AP75T10GS/ p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0 v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 120 0123456789 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 6.0v 5.0v 4.5v v g =3.0v t c = 150 o c 11 12 13 14 15 16 17 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 15 30 45 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP75T10GS/p 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =64v v ds =80v i d =30a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
package outline : to-220 millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 2.54 ref. 7.4 ref, symbols advanced power electronics corp. 5.10 ref. e1 b b1 e d l4 l1 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 75t10gp ywwsss logo l5 meet rohs requirement e d1 5
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 symbols meet rohs requirement 6
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