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  cys tech electronics corp. s pec. no. : c733 m3 issued date : 20 1 1.05.16 revised date : 2 013.08.12 page no. : 1/5 MTP1406M3 c y s t ek product s pecification p-channel logic level enha ncement mode mosfet bv dss -60v i d -4a r dson(max) 90.8m MTP1406M3 features ? single drive requirement ? low on-resistance, r ds(on) =90.8m @v gs =-10v, i d =-4a ? ultra high speed switching ? pb-free lead plated package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source v o ltage v ds -60 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d -4 continuous drain current @ t c =100 c i d -2.4 pulsed drain current *1 i dm -16 a total power dissipation @t a =25 1.67 total power dissipation @t a =100 pd 0.83 w operating junction and storage temperature tj, tstg -55~+175 c no te : * 1 . p u l s e wi dt h l i m it ed by m a xim u m j unct i o n t e m p erat ure *2. duty cycle 1% MTP1406M3 sot-89 g gate d g d s s source d drain http://
cys tech electronics corp. s pec. no. : c733 m3 issued date : 20 1 1.05.16 revised date : 2 013.08.12 page no. : 2/5 MTP1406M3 c y s t ek product s pecification thermal data parameter symbol value unit thermal resistance, junction-to-ambient, max r th,j-a 90 * c/w * surface mounted on 1 in 2 copper pad of fr-4 board; 270 c/w when mounted on min. copper pad electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -60 - - v v gs =0, i d =-250  a v gs(th) -1 -1.8 -3 v v ds =v gs , i d =-250  a i gss - - 100 na v gs = 20, v ds =0 - - -1  a v ds =-32v, v gs =0 i dss - - -25  a v ds =-30v, v gs =0, t j =125 c i d(on) *1 -4 - - a v ds =-5v, v gs =-4.5v - 82 90.8 m v gs =-10v, i d =-4a r ds(on) *1 - 120 140 m v gs =-5v, i d =-3a g fs *1 - 9 - s v ds =-5v, i d =-4a dynamic ciss - 1980 - coss - 665 - crss - 645 - pf v gs =0v, v ds =-25v, f=1mhz rg - 6.8 - v gs =15mv, v ds =0, f=1mhz t d(on) *1, 2 - 8 - tr *1, 2 - 12 - t d(off) *1, 2 - 20 - t f *1, 2 - 12 - ns v ds =-10v, i d =-1a, v gs =-10v, r g =6 qg *1, 2 - 16.2 - qgs *1, 2 - 2 - qgd *1, 2 - 3.5 - nc i d =-4a, v ds =-30v, v gs =-10v source-drain diode i s *1 - - -4 i sm *3 - - -16 a v sd *1 - - -1.3 v i f =i s , v gs =0v *trr - 12 - ns *qrr - 9 - nc i f =-4a, di f /dt=100a/  s no te :* 1.pu lse t e st : pu lse w i d t h 30 0  s, duty cycle 2% * 2 . i nde pe nde nt of ope rat i n g t e m p erat ure * 3 . p ul se wi dt h l i m i t e d by m a xim u m junct i o n t e m p erat ure. ordering information device package shipping marking MTP1406M3 sot-89 (pb-free lead plating package) 1000 pcs / tape & reel 1406
cys tech electronics corp. s pec. no. : c733 m3 issued date : 20 1 1.05.16 revised date : 2 013.08.12 page no. : 3/5 MTP1406M3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c733 m3 issued date : 20 1 1.05.16 revised date : 2 013.08.12 page no. : 4/5 MTP1406M3 c y s t ek product s pecification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c733 m3 issued date : 20 1 1.05.16 revised date : 2 013.08.12 page no. : 5/5 MTP1406M3 c y s t ek product s pecification sot-89 dimension inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0591 typ 1.50 typ b 0.1551 0.1673 3.94 4.25 g 0.1 181 typ 3.00 typ c 0.0610 ref 1.55 ref h 0.0551 0.0630 1.40 1.60 d 0.0906 0.1024 2.30 2.60 i marking: 1406 e f g c b a i d h 3 2 1 date code device name 3-lead sot-89 plastic surface mounted package cystek package code: m3 style: pin 1. gate 2. drain 3. source 0.0138 0.0173 0.35 0.44 e 0.0126 0.0205 0.32 0.52 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .


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