w w w w f f f f f840b f840b f840b f840b rev.a jul .201 1 copyright@winsemi co., ltd., all right reserved. silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 9a,500v, r ds(on) (max0.75 ? )@v gs =10v ? ultra-low gate charge(typical 28nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this po w er mosfet is produced using winsemi s advanced planar stripe, dmos technolog y . this latest technology has been especial l y designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. this devices is special l y w ell suited for high ef fi ciency s w itch model po w er supplies, po w er factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 9* a continuous drain current(@tc=100 ) 5.4* a i dm drain current pulsed (note1) 36* a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 360 mj e ar repetitive avalanche energy (note1) 13.5 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 135 w derating factor above 25 1.07 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 *drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.93 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
w w w w f f f f f840b f840b f840b f840b 2 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 1 a v ds =400v,tc=125 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.57 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 4.5 a - - 0.75 ? forward transconductance gfs v ds = 40 v,i d = 4.5 a - 6.5 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 790 1030 pf reverse transfer capacitance c rss - 24 30 output capacitance c oss - 130 170 switching time rise time tr v dd = 250 v, i d = 9 a r g = 25 ? (note4,5) - 65 140 ns turn-on time ton - 18 15 fall time tf - 64 125 turn-off time toff - 93 195 total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 9 a (note 4 ,5) - 28 35 nc gate-source charge qgs - 4 - gate-drain("miller") charge qgd - 15 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 9 a pulse drain reverse current i drp - - - 36 a forward voltage(diode) v dsf i dr = 9 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 9 a,v gs =0v, di dr / dt =100 a / s - 335 - ns reverse recovery charge qrr - 2.95 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 8 m h i as = 9 a,v dd =50v,r g = 25 ? ,starting t j =25 3.i sd 9 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
w w w w f f f f f840b f840b f840b f840b 3 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.1 on state characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristis fig.6 gate charge characteristics
w w w w f f f f f840b f840b f840b f840b 4 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature fig. 11 transient thermal response curve fig.7 breakdown voltage variation vs temperature fig.8 on-resistance variation vs.temperature
w w w w f f f f f840b f840b f840b f840b 5 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.1 2 gate test circuit & waveform fig.1 3 resistive switching test circuit & waveform fig.1 4 unclamped inductive switching test circuit & waveform
w w w w f f f f f840b f840b f840b f840b 6 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.1 5 peak diode recovery dv/dt test circuit & waveform
w w w w f f f f f840b f840b f840b f840b 7 / 7 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance to-220 to-220 to-220 to-220 f f f f package package package package dimension dimension dimension dimension unit:mm
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