wfy wfy wfy wfy 5 5 5 5 p p p p 0 0 0 0 3 3 3 3 symbol parameter v alue units v dss drain source v o ltage - 30 v v gss gate-to-source voltage 12 v i d continuous drain cur r ent -4.3 a i dm drain cur r ent pulsed pw 10us,duty cycle 1% -25 a p d allowable power dissipation mounted on a ceramic board (1000mm 2 0.8mm) lunit 0.25 w p t total dissipation mounted on a ceramic board (1000mm 2 0.8mm) 0.3 t ch channel t e mperatu r e 150 t stg storage temperature -55~150 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . - - - - 3 3 3 3 0v 0v 0v 0v p p p p ? ? ? ? channel channel channel channel mosfet mosfet mosfet mosfet features -4.3 a, - 3 0 v , r ds(on ) (max 58 m ? )@ v g s = -4. 5v -2.5 v rated for low v o ltage gate drive so t -23 surface mount for small footp r int single pulse av alanche energy rated gener a l de s cription this po w er mosfet is produced using winsemi s advanced mos technolog y . this latest technology has been especial l y designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. th i s devices is specially w ell suited for load/po w er management f or portables and computing, charging c i rcuits and battery protection absolute m a ximum r ating s ( t c =2 5 unless otherwise noted) re v . a j an 2 0 1 2 p 0 3 - 3
wfy wfy wfy wfy 5 5 5 5 p p p p 0 0 0 0 3 3 3 3 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc = 25 c) ch a racteristics sym b o l test co n diti o n min ty p e max un i t gate leakage curren t ( n o te 4) i gss v gs = 12 v, v ds = 0 v - - 100 na drain c ut ? off c urrent ( n o te 4 ) i dss v ds = -30 v , v gs = 0 v - - - 1 a drain ? source breakdown v oltage v (br)dss i d = - 250 a, v gs = 0 v - 30 - - v gate threshold v oltage v gs(th) v ds = v g s i d = - 250 a -0.6 -1.0 -1.3 v drain ? source o n resistance r ds(on) v gs = - 4.5 v , i d = -3.5 a - 52 58 m ? v gs = - 2 .5 v , i d = -2.5 a 72 80 input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz - 933 1200 pf reverse transfer c apacitance c rss - 81 - out p ut capacitance c oss - 108 - switching time (note 5 ) tur n -on delay t i me t d(o n ) v g s = 10 v , v d s = - 15 v , r g = 6 ? , r l = 3.5 ? - 5.2 - ns rise time t r - 6.8 - tur n -off delay t i me t d(off) - 42 - tur n ? off fall time t f - 15 - total gate c harge qg v g s = - 4.5 v , v d s = - 15 v , i d = -4.3 a - 9. 3 12 .2 nc gate ? source charge qgs - 1. 5 - gate ? drain ( mille r ) char g e qgd - 3. 7 - diode forward voltage v sd i s = -1,v gs =0v -0.75 -1.0 v
wfy wfy wfy wfy 5 5 5 5 p p p p 0 0 0 0 3 3 3 3 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
wfy wfy wfy wfy 5 5 5 5 p p p p 0 0 0 0 3 3 3 3 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
wfy wfy wfy wfy 5 5 5 5 p p p p 0 0 0 0 3 3 3 3 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance so so so so t t t t - - - - 23 23 23 23 package package package package d d d d imension imension imension imension dim dim dim dim millimters millimters millimters millimters inches inches inches inches min min min min max max max max min min min min max max max max a 0.95 0.037 a1 1.90 0.074 b 2.60 3.00 0.102 0. 1 1 8 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0. 1 10 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 50 o 10 o 5 0 o 10 o
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