sot323 npn silicon planar rf transistors issue 1 C december 1998 partmarking detail zumts17 - t4 ZUMTS17H - t4h absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 2.5 v peak pulse current i cm 50 ma continuous collector current i c 25 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo 10 10 na m a v cb =10v, i e =0 v cb =10v, i e =0, t amb = 100c static forward current transfer ratio h fe 25 20 150 125 i c =2.0ma, v ce =1.0v i c =25ma, v ce =1.0v ZUMTS17H 70 200 i c =2.0ma, v ce =1.0v transition frequency f t 1.0 1.3 ghz ghz i c =2.0ma, v ce =5.0v f=500mhz i c =25ma, v ce =5.0v f=500mhz feedback capacitance -c re 0.85 pf i c =2.0ma, v ce =5v, f=1mhz collector capacitance c tc 1.5 pf i e =i e =0, v cb =10v, f=1mhz emitter capacitance c te 2.0 pf i c =i c =0, v eb =5.0v, f=1mhz noise figure n 4.5 db i c =2.0ma, v ce =5.0v r s =50 w , f=500mhz intermodulation distortion d im -45 db i c =10ma, v ce =6.0v r l =37.5 w ,t amb =25c v o =100mv at f p =183mhz v o =100mv at f q =200mhz measured at f (2q-p) =217mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device zumts17 ZUMTS17H zumts17 and ZUMTS17H are obsolete please use zumts17n
3 - typical characteristics f t v i c i c - collector current (ma) f t - (ghz) 1 m 10 m 10m 100 m 1m i c - collector current (a) h fe v i c h f e - norma l ised ga i n 20 40 60 80 100 0.1 f=400mhz 1000 1 2 3 v ce - (v) c re v v ce c re - ( p f ) 0 10 20 30 0.5 1.0 1.5 2.0 v ce =10v 0 11 0 v ce =10v v ce =5v 100m f=1mhz zumts17 ZUMTS17H zumts17 and ZUMTS17H are obsolete please use zumts17n
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