this is information on a product in full production. october 2012 doc id 15294 rev 3 1/9 9 2N2219AHR hi-rel npn bipolar transistor 40 v, 0.8 a datasheet ? production data features hi-rel npn bipolar transistor linear gain characteristics escc qualified european preferred part list - eppl radiation level: lot specific total dose contact marketing for specified level description the 2N2219AHR is a silicon planar epitaxial npn transistor in a to-39 package. it is specifically designed for aerospace hi-rel applications, and escc qualified in accordance with the 5201-003 specification. in case of discrepancies between this datasheet and escc detailed specification, the latter prevails. figure 1. internal schematic diagram bv ceo 40 v i c (max) 0.8 a h fe at 10 v - 150 m > 100 operating temperature range - 65 c to + 200 c to-39 table 1. device summary order codes package lead finish marking type eppl packaging 2N2219AHR to-39 gold solder dip 520100301 520100302 escc flight yes strip pack 2n2219at1 to-39 gold 2n2219at1 engineering model strip pack www.st.com www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical ratings 2N2219AHR 2/9 doc id 15294 rev 3 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v ceo collector-emitter voltage (i b = 0) 40 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 0.8 a p tot total dissipation at t amb 25c total dissipation at t c 25c 0.8 3 w w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter value unit r thjc r thja thermal resistance junction-case __ max thermal resistance junction-ambient __ max 58 218 c/w c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
2N2219AHR electrical characteristics doc id 15294 rev 3 3/9 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v, t amb = 150 c - 10 10 na a i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 10 a 75 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 10 ma 40 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma - 0.3 1 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma, i b = 15 ma - 1.2 v h fe (1) dc current gain i c = 10 ma, v ce = 10 v i c = 150 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 10 ma, v ce = 10 v t amb = -55 c 75 100 40 35 - 300 h fe small signal current gain v ce = 20 v, i c = 20 ma f = 100 mhz 2.5 - c cbo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf t on tu r n - o n t i m e v cc = 30 v, i c = 150 ma i b1 = 15 ma -35ns t off turn-off time v cc = 30 v, i c = 150 ma i b1 = -i b2 = 15 ma - 300 ns www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical characteristics 2N2219AHR 4/9 doc id 15294 rev 3 2.1 electrical characteristics (curves) figure 2. dc current gain figure 3. collector emitter saturation voltage figure 4. base emitter saturation voltage ! - v , f $ (
? # ? # ? # 6 # % 6 ! - v
? # , f $ ? # ? # h & |