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savantic semiconductor product specification silicon pnp power transistors 2SB552 description with to-3 package complement to type 2sd552 applications power amplifier applications power switching applications dc-dc converters pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -220 v v ceo collector-emitter voltage open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -4 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB552 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -180 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -2.0 v v besat base-emitter saturation voltage i c =-10a; i b =-1a -2.5 v i cbo collector cut-off current v cb =-220v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-5a ; v ce =-5v 25 80 c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 300 pf f t transition frequency i c =-1a ; v ce =-10v 3.5 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2SB552 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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